Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors

2016 ◽  
Vol 10 (5) ◽  
pp. 420-425 ◽  
Author(s):  
Mihaela Popovici ◽  
Ben Kaczer ◽  
Valeri V. Afanas'ev ◽  
Gabriele Sereni ◽  
Luca Larcher ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Low Leakage ◽  
Metal Insulator Metal

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

2017 ◽  
Vol 7 (3) ◽  
pp. 1554
Author(s):  
M. A. Zulkifeli ◽  
S. N. Sabki ◽  
S. Taking ◽  
N. A. Azmi ◽  
S. S. Jamuar
Keyword(s):  
Breakdown Voltage ◽  
High Performance ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Metal Insulator ◽  
Low Leakage ◽  
Dielectric Layers ◽  
Metal Insulator Metal ◽  
Materials Used ◽  
Mim Capacitors

<p>A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers.  The effect of the different dielectric constants (<em>k</em>) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-<em>k</em> and high-<em>k</em> dielectric materials. The dielectric materials used in this study with high-<em>k</em> are Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub>, while the low-<em>k</em> dielectric materials are SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>. The results demonstrate that the dielectric materials with high-<em>k</em> produce the highest capacitance. Results also show that metal-Al<sub>2</sub>O<sub>3</sub> interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.</p>

Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

2012 ◽  
Vol 100 (8) ◽  
pp. 081101 ◽  
Author(s):  
Jong-Chang Woo ◽  
Yoon-Soo Chun ◽  
Young-Hee Joo ◽  
Chang-Il Kim
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal
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