Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing

2016 ◽  
Vol 72 (4) ◽  
pp. 91-100 ◽  
Author(s):  
Y. Koda ◽  
H. Sugita ◽  
T. Suwa ◽  
R. Kuroda ◽  
T. Goto ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Metal Insulator ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Post Deposition

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

2006 ◽  
Vol 89 (13) ◽  
pp. 133512 ◽  
Author(s):  
Kyoung H. Kim ◽  
Damon B. Farmer ◽  
Jean-Sebastien M. Lehn ◽  
P. Venkateswara Rao ◽  
Roy G. Gordon
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
High Dielectric

MIM Capacitors Using ALD Al2O3 for RF IC and DRAM Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Sung Yong Ko ◽  
Jung Ik Oh ◽  
Joung Cheul Choi ◽  
Kang Hee Lee ◽  
Young Ho Bae ◽  
...  
Keyword(s):  
Leakage Current ◽  
Coplanar Waveguide ◽  
Atomic Layer ◽  
Good Reliability ◽  
Voltage Coefficient ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTMetal-insulator-metal (MIM) capacitors were fabricated in a coplanar waveguide type using the Al2O3 thin film. The Al2O3 film was grown by atomic layer deposition(ALD) using Methyl-Pyrolidine-Tri-Methyl-Aluminum (MPTMA) and H2O on Ti. The capacitance per unit area of the fabricated MIM capacitor was 0.229 μF/cm2. And it had lower voltage coefficient of capacitance (VCC) and lower leakage current than that of Al2O3 MIM capacitor prepared by Al oxidation and Si3N4 MIM capacitor prepared by PECVD respectively. The fabricated Al2O3 MIM capacitors prepared by ALD exhibited low VCC, low leakage current, small frequency-dependent capacitance reduction, low temperature coefficient of capacitance (TCC) and good reliability. The characteristics of the device were suitable for RF ICs and DRAM.

Atomic layer deposition of high-permittivity TiO2dielectrics with low leakage current on RuO2in TiCl4-based processes

2012 ◽  
Vol 27 (7) ◽  
pp. 074007 ◽  
Author(s):  
Jaan Aarik ◽  
Boris Hudec ◽  
Kristina Hušeková ◽  
Raul Rammula ◽  
Aarne Kasikov ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Atomic Layer ◽  
High Permittivity ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition

High-Temperature Trench Capacitors, Using Thin-Film ALD Dielectrics

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000130-000133 ◽  
Author(s):  
Dorothee Dietz ◽  
Yusuf Celik ◽  
Andreas Goehlich ◽  
Holger Vogt ◽  
Holger Kappert
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Automobile Industry ◽  
Elevated Temperatures ◽  
Atomic Layer ◽  
Operating Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Soft Breakdown

High-temperature passive electronic becomes more and more important, e.g. in the field of deep drilling, aerospace or in automobile industry. For these applications, capacitors are needed, which are able to withstand temperatures up to 300 °C, which exhibit a low leakage current at elevated temperatures, a breakdown voltage above the intended operating voltage and a high capacitive density value. In this paper, investigations of 3D-integration and atomic layer deposition (ALD) techniques to achieve these features are presented. A highly n-doped Si-substrate acts as a bottom electrode. Medium- and high-k dielectrics represent the insulator and the upper electrode consists of Ru, TiN or TiAlCN. The materials can be used at elevated temperatures. At room temperature, the leakage current is less than 10 pA/mm2 without showing a soft-breakdown up to ± 15 V, indicating the absence of Fowler-Nordheim tunneling. At 300 °C and at 3 V the leakage current amounts about 1 nA/mm2 and at 5 V a soft-breakdown is detected.

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