scholarly journals Large-area, polarisation-sensitive plasmonic materials from colloidal lithography

2016 ◽  
Vol 10 (5) ◽  
pp. 404-408 ◽  
Author(s):  
Anthony John Morfa ◽  
Valerio Oddone ◽  
Michael Giersig
Keyword(s):  
Colloidal Lithography ◽  
Large Area ◽  
Plasmonic Materials

Large‐Area Fabrication of Highly Tunable Hybrid Plasmonic–Photonic Structures Based on Colloidal Lithography and a Photoreconfigurable Polymer

2019 ◽  
Vol 7 (19) ◽  
pp. 1900483 ◽  
Author(s):  
Shiqiang Wang ◽  
Hao Dong ◽  
Fuwei Sun ◽  
Wanlin Zhang ◽  
Yun Liang ◽  
...  
Keyword(s):  
Colloidal Lithography ◽  
Large Area ◽  
Photonic Structures

Fabrication of large area homogeneous metallic nanostructures for optical sensing using colloidal lithography

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1471-1474 ◽  
Author(s):  
R.L. Eriksen ◽  
A. Pors ◽  
J. Dreier ◽  
A.C. Simonsen ◽  
O. Albrektsen
Keyword(s):  
Optical Sensing ◽  
Metallic Nanostructures ◽  
Colloidal Lithography ◽  
Large Area

scholarly journals Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

2012 ◽  
Vol 3 ◽  
pp. 884-892 ◽  
Author(s):  
Adrian Iovan ◽  
Marco Fischer ◽  
Roberto Lo Conte ◽  
Vladislav Korenivski
Keyword(s):  
Electronic Devices ◽  
Point Contact ◽  
Metallic Materials ◽  
Colloidal Lithography ◽  
Large Area ◽  
Fully Integrated ◽  
Broad Application ◽  
Circuit Integration

Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Repetitive Hole-Mask Colloidal Lithography for the Fabrication of Large-Area Low-Cost Plasmonic Multishape Single-Layer Metasurfaces

2015 ◽  
Vol 3 (5) ◽  
pp. 680-686 ◽  
Author(s):  
Jun Zhao ◽  
Sarah Jaber ◽  
Paul Mulvaney ◽  
Paul V. Braun ◽  
Harald Giessen
Keyword(s):  
Low Cost ◽  
Single Layer ◽  
Colloidal Lithography ◽  
Large Area

scholarly journals Rayleigh anomaly-enabled mode hybridization in gold nanohole arrays by scalable colloidal lithography for highly-sensitive biosensing

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Zhiliang Zhang ◽  
Feng Zhao ◽  
Renxian Gao ◽  
Chih-Yu Jao ◽  
Churong Ma ◽  
...  
Keyword(s):  
Refractive Index ◽  
Plasmonic Nanostructures ◽  
Label Free ◽  
Colloidal Lithography ◽  
Large Area ◽  
Nanohole Array ◽  
Highly Sensitive ◽  
Label Free Detection ◽  
Nanohole Arrays ◽  
Rayleigh Anomaly

Abstract Plasmonic sensors exhibit tremendous potential to accomplish real-time, label-free, and high-sensitivity biosensing. Gold nanohole array (GNA) is one of the classic plasmonic nanostructures that can be readily fabricated and integrated into microfluidic platforms for a variety of applications. Even though GNA has been widely studied, new phenomena and applications are still emerging continuously expanding its capabilities. In this article, we demonstrated narrow-band high-order resonances enabled by Rayleigh anomaly in the nanohole arrays that are fabricated by scalable colloidal lithography. We fabricated large-area GNAs with different hole diameters, and investigated their transmission characteristics both numerically and experimentally. We showed that mode hybridization between the plasmon mode of the nanoholes and Rayleigh anomaly of the array could give rise to high-quality decapole resonance with a unique nearfield profile. We experimentally achieved a refractive index sensitivity, i.e., RIS up to 407 nm/RIU. More importantly, we introduced a spectrometer-free refractive index sensing based on lens-free smartphone imaging of GNAs with (intensity) sensitivity up to 137%/RIU. Using this platform, we realized the label-free detection of BSA molecules with concentration as low as 10−8 M. We believe our work could pave the way for highly sensitive and compact point-of-care devices with cost-effective and high-throughput plasmonic chips.

“Mesh-assisted” colloidal lithography and plasma etching: A route to large-area, uniform, ordered nano-pillar and nanopost fabrication on versatile substrates

2011 ◽  
Vol 88 (8) ◽  
pp. 2547-2551 ◽  
Author(s):  
Kosmas Ellinas ◽  
Athanasios Smyrnakis ◽  
Antonia Malainou ◽  
Angeliki Tserepi ◽  
Evangelos Gogolides
Keyword(s):  
Plasma Etching ◽  
Colloidal Lithography ◽  
Large Area

Fabrication of large area nanotemplate through nanosilver colloidal lithography

2010 ◽  
Author(s):  
Seong-Je Park ◽  
Soon-Won Lee ◽  
Hyeong-Ho Park ◽  
Ji-Hye Lee ◽  
Dae-Geun Choi ◽  
...  
Keyword(s):  
Colloidal Lithography ◽  
Large Area

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

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