scholarly journals Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

2012 ◽  
Vol 3 ◽  
pp. 884-892 ◽  
Author(s):  
Adrian Iovan ◽  
Marco Fischer ◽  
Roberto Lo Conte ◽  
Vladislav Korenivski
Keyword(s):  
Electronic Devices ◽  
Point Contact ◽  
Metallic Materials ◽  
Colloidal Lithography ◽  
Large Area ◽  
Fully Integrated ◽  
Broad Application ◽  
Circuit Integration

Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Organic vapor phase deposition for the growth of large area organic electronic devices

2009 ◽  
Vol 95 (23) ◽  
pp. 233305 ◽  
Author(s):  
Richard R. Lunt ◽  
Brian E. Lassiter ◽  
Jay B. Benziger ◽  
Stephen R. Forrest
Keyword(s):  
Vapor Phase ◽  
Electronic Devices ◽  
Large Area ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition

scholarly journals Single molecule vs. large area design of molecular electronic devices incorporating an efficient 2-aminepyridine double anchoring group

Nanoscale ◽  
2019 ◽  
Vol 11 (34) ◽  
pp. 15871-15880 ◽  
Author(s):  
L. Herrer ◽  
A. Ismael ◽  
S. Martín ◽  
D. C. Milan ◽  
J. L. Serrano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Molecule ◽  
Electronic Devices ◽  
Large Area ◽  
Molecular Electronic ◽  
Single Molecule Level ◽  
Order Of Magnitude ◽  
Anchoring Group ◽  
Molecular Skeleton ◽  
Molecular Electronic Devices

The electrical properties of a bidentate molecule in both large area devices and at the single molecule level have been explored and exhibit a conductance one order of magnitude higher than that of monodentate materials with same molecular skeleton.

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

2012 ◽  
Vol 1433 ◽  
Author(s):  
A. Severino ◽  
M. Mauceri ◽  
R. Anzalone ◽  
A. Canino ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Low Cost ◽  
Electronic Devices ◽  
Young Modulus ◽  
Interesting Property ◽  
Large Area ◽  
Si Substrates ◽  
Application Fields ◽  
Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

scholarly journals Correction: Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

2018 ◽  
Vol 6 (10) ◽  
pp. 2604-2604
Author(s):  
F. A. Alharthi ◽  
F. Cheng ◽  
E. Verrelli ◽  
N. T. Kemp ◽  
A. F. Lee ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Low Voltage ◽  
Electronic Devices ◽  
Large Area ◽  
Oxide Nanorods ◽  
Niobium Doped ◽  
Solution Processable

Correction for ‘Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices’ by F. A. Alharthi et al., J. Mater. Chem. C, 2018, 6, 1038–1047.

scholarly journals Nanofabrication Techniques in Large-Area Molecular Electronic Devices

2020 ◽  
Vol 10 (17) ◽  
pp. 6064
Author(s):  
Lucía Herrer ◽  
Santiago Martín ◽  
Pilar Cea
Keyword(s):  
Molecular Electronics ◽  
Global Economy ◽  
Electronic Devices ◽  
Functional Materials ◽  
Large Area ◽  
Molecular Electronic ◽  
Hybrid Technology ◽  
Top Contact ◽  
Silicon Based ◽  
Molecular Electronic Devices

The societal impact of the electronics industry is enormous—not to mention how this industry impinges on the global economy. The foreseen limits of the current technology—technical, economic, and sustainability issues—open the door to the search for successor technologies. In this context, molecular electronics has emerged as a promising candidate that, at least in the short-term, will not likely replace our silicon-based electronics, but improve its performance through a nascent hybrid technology. Such technology will take advantage of both the small dimensions of the molecules and new functionalities resulting from the quantum effects that govern the properties at the molecular scale. An optimization of interface engineering and integration of molecules to form densely integrated individually addressable arrays of molecules are two crucial aspects in the molecular electronics field. These challenges should be met to establish the bridge between organic functional materials and hard electronics required for the incorporation of such hybrid technology in the market. In this review, the most advanced methods for fabricating large-area molecular electronic devices are presented, highlighting their advantages and limitations. Special emphasis is focused on bottom-up methodologies for the fabrication of well-ordered and tightly-packed monolayers onto the bottom electrode, followed by a description of the top-contact deposition methods so far used.

Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices

2008 ◽  
Author(s):  
Srividya Natarajan ◽  
Charles B. Parker ◽  
Jeffrey T. Glass ◽  
Christopher A. Bower ◽  
Kristin H. Gilchrist ◽  
...  
Keyword(s):  
High Voltage ◽  
Electronic Devices ◽  
Fully Integrated ◽  
Vacuum Electronic Devices ◽  
On Chip

scholarly journals Large area epitaxial germanane for electronic devices

2D Materials ◽  
2015 ◽  
Vol 2 (3) ◽  
pp. 035012 ◽  
Author(s):  
Walid Amamou ◽  
Patrick M Odenthal ◽  
Elizabeth J Bushong ◽  
Dante J O’Hara ◽  
Yunqiu Kelly Luo ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Large Area

Selectable Synthesis of 2-D MoS2and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film

2016 ◽  
Vol 15 (2) ◽  
pp. 310-317 ◽  
Author(s):  
Wai Ching Cho ◽  
Kam Lam Wu ◽  
Pak San Yip ◽  
Xinsheng Wang ◽  
Yang Chai ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Devices ◽  
Large Area
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