Back Cover: Monitoring of the growth of microcrystalline silicon by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy (Phys. Status Solidi RRL 4/2011)

2011 ◽  
Vol 5 (4) ◽  
pp. n/a-n/a
Author(s):  
S. Muthmann ◽  
F. Köhler ◽  
M. Meier ◽  
M. Hülsbeck ◽  
R. Carius ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
In Situ Raman Spectroscopy ◽  
Back Cover ◽  
In Situ Raman

Monitoring the growth of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy

2011 ◽  
Vol 1321 ◽  
Author(s):  
S. Muthmann ◽  
F. Köhler ◽  
M. Hülsbeck ◽  
M. Meier ◽  
A. Mück ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
In Situ Raman Spectroscopy ◽  
Substrate Heating ◽  
In Situ Raman ◽  
Experimental Parameters ◽  
20 Nm

ABSTRACTA novel setup for Raman measurements under small angles of incidence during the parallel plate plasma enhanced chemical vapor deposition of μc-Si:H films is described. The possible influence of disturbances introduced by the setup on growing films is studied. The substrate heating by the probe beam is investigated and reduced as far as possible. It is shown that with optimized experimental parameters the influence of the in-situ measurements on a growing film can be neglected. With optimized settings, in-situ Raman measurements on the intrinsic layer of a microcrystalline silicon solar cell are carried out with a time resolution of about 40 s corresponding to 20 nm of deposited material during each measurement.

Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung-Bae Park ◽  
Ji-Sim Jung ◽  
Jong-Man Kim ◽  
Myung-kwan Ryu ◽  
Sang-Yoon Lee ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon

AbstractMicrocrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

scholarly journals In Situ Raman Monitoring of the Formation and Growth of Carbon Nanotubes via Chemical Vapor Deposition

2015 ◽  
Vol 102 ◽  
pp. 190-200 ◽  
Author(s):  
Karla Reinhold-López ◽  
Andreas Braeuer ◽  
Bettina Romann ◽  
Nadejda Popovska-Leipertz ◽  
Alfred Leipertz
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Raman
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