Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low‐pressure chemical vapor deposition

A. T. Voutsas; M. K. Hatalis; J. Boyce; A. Chiang

doi:10.1063/1.360468

Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.360468 ◽

1995 ◽

Vol 78 (12) ◽

pp. 6999-7006 ◽

Cited By ~ 170

Author(s):

A. T. Voutsas ◽

M. K. Hatalis ◽

J. Boyce ◽

A. Chiang

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure

Journal of Applied Physics ◽

10.1063/1.343794 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4806-4811 ◽

Cited By ~ 14

Author(s):

P. Joubert ◽

M. Sarret ◽

L. Haji ◽

L. Hamedi ◽

B. Loisel

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Crystallization of amorphous silicon films during low pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94080 ◽

1983 ◽

Vol 42 (9) ◽

pp. 835-837 ◽

Cited By ~ 58

Author(s):

E. Kinsbron ◽

M. Sternheim ◽

R. Knoell

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.338036 ◽

1987 ◽

Vol 61 (5) ◽

pp. 1898-1904 ◽

Cited By ~ 25

Author(s):

Arthur J. Learn ◽

Derrick W. Foster

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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ChemInform Abstract: In situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine.

ChemInform ◽

10.1002/chin.199037340 ◽

1990 ◽

Vol 21 (37) ◽

Author(s):

L. D. MADSEN ◽

L. WEAVER

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

Journal of Applied Physics ◽

10.1063/1.347215 ◽

1991 ◽

Vol 69 (3) ◽

pp. 1703-1706 ◽

Cited By ~ 134

Author(s):

Kenji Nakazawa

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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In Situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine

Journal of The Electrochemical Society ◽

10.1149/1.2086921 ◽

1990 ◽

Vol 137 (7) ◽

pp. 2246-2251 ◽

Cited By ~ 16

Author(s):

Lynnette D. Madsen ◽

Louise Weaver

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity

Journal of Applied Physics ◽

10.1063/1.343795 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4812-4817 ◽

Cited By ~ 7

Author(s):

L. Haji ◽

L. Hamedi ◽

B. Loisel ◽

M. Gauneau ◽

P. Joubert ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films

Applied Surface Science ◽

10.1016/0169-4332(95)00258-8 ◽

1996 ◽

Vol 92 ◽

pp. 372-377

Author(s):

Fang-Shing Wang ◽

Meng-Jin Tsai ◽

Wen-Koi Lai ◽

Huang-Chung Cheng

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Dosage Effect ◽

Silicon Films ◽

Pressure Chemical

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Rapid thermal oxidation of low-pressure chemical vapor deposition amorphous silicon films

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584857 ◽

1990 ◽

Vol 8 (1) ◽

pp. 10 ◽

Cited By ~ 1

Author(s):

F. Gualandris

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Thermal Oxidation ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Rapid Thermal Oxidation ◽

Pressure Chemical

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Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l1254 ◽

1994 ◽

Vol 33 (Part 2, No. 9A) ◽

pp. L1254-L1256 ◽

Cited By ~ 2

Author(s):

Meng-Jin Tsai ◽

Fang-Shin Wang ◽

Huang-Chung Cheng

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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