Monitoring the growth of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy

2011 ◽  
Vol 1321 ◽  
Author(s):  
S. Muthmann ◽  
F. Köhler ◽  
M. Hülsbeck ◽  
M. Meier ◽  
A. Mück ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
In Situ Raman Spectroscopy ◽  
Substrate Heating ◽  
In Situ Raman ◽  
Experimental Parameters ◽  
20 Nm

ABSTRACTA novel setup for Raman measurements under small angles of incidence during the parallel plate plasma enhanced chemical vapor deposition of μc-Si:H films is described. The possible influence of disturbances introduced by the setup on growing films is studied. The substrate heating by the probe beam is investigated and reduced as far as possible. It is shown that with optimized experimental parameters the influence of the in-situ measurements on a growing film can be neglected. With optimized settings, in-situ Raman measurements on the intrinsic layer of a microcrystalline silicon solar cell are carried out with a time resolution of about 40 s corresponding to 20 nm of deposited material during each measurement.

scholarly journals In Situ Raman Monitoring of the Formation and Growth of Carbon Nanotubes via Chemical Vapor Deposition

2015 ◽  
Vol 102 ◽  
pp. 190-200 ◽  
Author(s):  
Karla Reinhold-López ◽  
Andreas Braeuer ◽  
Bettina Romann ◽  
Nadejda Popovska-Leipertz ◽  
Alfred Leipertz
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Raman

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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