High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

2007 ◽  
Vol 1 (4) ◽  
pp. 162-164 ◽  
Author(s):  
Hitoshi Sato ◽  
Anurag Tyagi ◽  
Hong Zhong ◽  
Natalie Fellows ◽  
Roy B. Chung ◽  
...  
2010 ◽  
Vol 49 (8) ◽  
pp. 080203 ◽  
Author(s):  
Ingrid L. Koslow ◽  
Junichi Sonoda ◽  
Roy B. Chung ◽  
Chih-Chien Pan ◽  
Stuart Brinkley ◽  
...  

2007 ◽  
Vol 90 (23) ◽  
pp. 233504 ◽  
Author(s):  
Hong Zhong ◽  
Anurag Tyagi ◽  
Natalie N. Fellows ◽  
Feng Wu ◽  
Roy B. Chung ◽  
...  

2007 ◽  
Vol 43 (15) ◽  
pp. 825 ◽  
Author(s):  
H. Zhong ◽  
A. Tyagi ◽  
N.N. Fellows ◽  
R.B. Chung ◽  
M. Saito ◽  
...  

2010 ◽  
Vol 49 (8) ◽  
pp. 080210 ◽  
Author(s):  
Chih-Chien Pan ◽  
Ingrid Koslow ◽  
Junichi Sonoda ◽  
Hiroaki Ohta ◽  
Jun-Seok Ha ◽  
...  

2001 ◽  
Vol 79 (6) ◽  
pp. 711-712 ◽  
Author(s):  
Toshio Nishida ◽  
Hisao Saito ◽  
Naoki Kobayashi

2012 ◽  
Vol 557-559 ◽  
pp. 776-780
Author(s):  
Yi Bo Chen ◽  
Wei Cai ◽  
Yong Qiao Liu ◽  
Meng Lian Gong

Low temperature-quenching and high-efficiency Ca3Sc2Si3O12:1%Ce3+, x%Ba2+ phosphors were prepared by solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Ba2+ ions can improve the photoluminescence properties and decrease temperature-quenching of Ca3Sc2Si3O12:Ce3+ phosphor obviously. High-efficiency blue-green light-emitting diode was fabricated with the prepared phosphor and an InGaN blue-emitting (~460 nm) chip. Good performance of the prepared LED indicates that Ca3Sc2Si3O12:1%Ce3+, 0.5%Ba2+ phosphor is a suitable candidate for the fabrication of high-efficiency white LEDs.


1992 ◽  
Vol 281 ◽  
Author(s):  
Y. Lansari ◽  
Z. Yu ◽  
J. Ren ◽  
C. Boney ◽  
J. W. Cook ◽  
...  

ABSTRACTIntegrated heterostructure devices (IHDs) comprised of II-VI materials in multi-layered structures for light emitting diode (LED) and laser diode (LD) applications are described. These IHDs combine a light emission multilayer structure (wide band gap II-VI layers) with an abrupt or graded heterostructure (comprised of narrow band gap II-VI layers) for improved ohmic contact to the upper p-type layer of the light emitting structure.


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