Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes

2010 ◽  
Vol 49 (8) ◽  
pp. 080210 ◽  
Author(s):  
Chih-Chien Pan ◽  
Ingrid Koslow ◽  
Junichi Sonoda ◽  
Hiroaki Ohta ◽  
Jun-Seok Ha ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Emitting

All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Shell Growth ◽  
Solution Processed ◽  
Light Emitting ◽  
Long Lifetime

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

2010 ◽  
Vol 3 (10) ◽  
pp. 102101 ◽  
Author(s):  
Yuji Zhao ◽  
Junichi Sonoda ◽  
Chih-Chien Pan ◽  
Stuart Brinkley ◽  
Ingrid Koslow ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

High efficiency above 20% in polymeric thermally activated delayed fluorescent organic light-emitting diodes by a host embedded backbone structure

2019 ◽  
Vol 10 (35) ◽  
pp. 4872-4878 ◽  
Author(s):  
Yun Hwan Park ◽  
Ho Jin Jang ◽  
Jun Yeob Lee
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Thermally Activated ◽  
Highly Efficient ◽  
Organic Light ◽  
Backbone Structure

A highly efficient polymeric thermally activated delayed fluorescent (TADF) organic light-emitting diode was developed by synthesizing a copolymer with 9-vinylcarbazole (VCz) and TADF repeating units.

High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (30\bar3\bar1) Bulk GaN Substrate

2010 ◽  
Vol 49 (8) ◽  
pp. 080203 ◽  
Author(s):  
Ingrid L. Koslow ◽  
Junichi Sonoda ◽  
Roy B. Chung ◽  
Chih-Chien Pan ◽  
Stuart Brinkley ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Free Standing ◽  
Light Emitting ◽  
Bulk Gan

Thermal Characteristics of High-Power LED Packages with Dissipation Film

2013 ◽  
Vol 397-400 ◽  
pp. 1767-1771
Author(s):  
Cheng Yi Hsu ◽  
Yu Li Lin
Keyword(s):  
High Power ◽  
Diamond Film ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Thermal Characteristics ◽  
Large Change ◽  
Junction Temperature ◽  
Conduction Model ◽  
Element Analysis ◽  
Light Emitting

A simple, fast, and reliable characterization method for measuring junction temperature (Tj) on high power GaN-based light emitting diodes (LED) was presented in this study. Thermal characteristics of high power Light-emitting-diode have been analyzed by using a three-dimensional thermal conduction model. Maximum operation temperature has also been calculated. The induced thermal behaviors of the best package processes for LED device with diamond film were investigated by finite element analysis (FEA) and by experimental measurement. The large change of forward operation voltage with temperature in light emitting diodes is advantageously used to measure junction temperature. Using this method, junction temperature (Tj) of LED under various structures and chip mounting methods was measured. It was found that the junction temperature can be reduced considerably by using diamond film substrates to replace sapphire substrate. In this study, the junction temperature can be decreased by about 14.3% under 1.5W power and decreased by about 15.9% under 1W power for 1mm square die. The thermal resistance (RT) can be measured to be 14.8°C/W under 1.5W power and 16.6°C/W under 1.W power.

High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

2007 ◽  
Vol 90 (23) ◽  
pp. 233504 ◽  
Author(s):  
Hong Zhong ◽  
Anurag Tyagi ◽  
Natalie N. Fellows ◽  
Feng Wu ◽  
Roy B. Chung ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Bulk Gan

scholarly journals High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

2008 ◽  
Vol 32 (2) ◽  
pp. 107-110 ◽  
Author(s):  
Hitoshi SATO ◽  
Hirohiko HIRASAWA ◽  
Hirokuni ASAMIZU ◽  
Natalie FELLOWS ◽  
Anurag TYAGI ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

Development of high-efficiency and high-power vertical light emitting diodes

2014 ◽  
Vol 53 (10) ◽  
pp. 100208 ◽  
Author(s):  
Berthold Hahn ◽  
Bastian Galler ◽  
Karl Engl
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

2007 ◽  
Vol 1 (4) ◽  
pp. 162-164 ◽  
Author(s):  
Hitoshi Sato ◽  
Anurag Tyagi ◽  
Hong Zhong ◽  
Natalie Fellows ◽  
Roy B. Chung ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Green Light ◽  
Free Standing ◽  
Light Emitting ◽  
Bulk Gan
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