Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

2001 ◽  
Vol 79 (6) ◽  
pp. 711-712 ◽  
Author(s):  
Toshio Nishida ◽  
Hisao Saito ◽  
Naoki Kobayashi
Keyword(s):  
Ultraviolet Light ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Bulk Gan

High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

2007 ◽  
Vol 90 (23) ◽  
pp. 233504 ◽  
Author(s):  
Hong Zhong ◽  
Anurag Tyagi ◽  
Natalie N. Fellows ◽  
Feng Wu ◽  
Roy B. Chung ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Bulk Gan

Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

2007 ◽  
Vol 43 (15) ◽  
pp. 825 ◽  
Author(s):  
H. Zhong ◽  
A. Tyagi ◽  
N.N. Fellows ◽  
R.B. Chung ◽  
M. Saito ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Bulk Gan

340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers

2008 ◽  
Vol 5 (6) ◽  
pp. 2280-2282 ◽  
Author(s):  
Sachie Fujikawa ◽  
Takayoshi Takano ◽  
Yukihiro Kondo ◽  
Hideki Hirayama
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
P Type

High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

2007 ◽  
Vol 1 (4) ◽  
pp. 162-164 ◽  
Author(s):  
Hitoshi Sato ◽  
Anurag Tyagi ◽  
Hong Zhong ◽  
Natalie Fellows ◽  
Roy B. Chung ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Green Light ◽  
Free Standing ◽  
Light Emitting ◽  
Bulk Gan

Phosphor concentration and geometry for high power white light emitting diode

2010 ◽  
Author(s):  
Kyung-Mi Moon ◽  
Se-Hwan An ◽  
Hyung-Kun Kim ◽  
Jung-Hye Chae ◽  
Yong-Jo Park
Keyword(s):  
White Light ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting

High-Power CW Operation of GaInAsP/InP Superluminescent Light-Emitting Diode with Tapered Active Region

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L678-L680 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shigeaki Sekiguchi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Active Region ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Cw Operation

Reliability of High-Power Light Emitting Diode Attached With Different Thermal Interface Materials

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Xin Li ◽  
Xu Chen ◽  
Guo-Quan Lu
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Temperature Cycling ◽  
Fluorescent Light ◽  
Light Sources ◽  
Light Emitting ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Interconnection Material

As a solid electroluminescent source, white light emitting diode (LED) has entered a practical stage and become an alternative to replace incandescent and fluorescent light sources. However, due to the increasing integration and miniaturization of LED chips, heat flux inside the chip is also increasing, which puts the packaging into the position to meet higher requirements of heat dissipation. In this study, a new interconnection material—nanosilver paste is used for the LED chip packaging to pursue a better optical performance, since high thermal conductivity of this material can help improve the efficiency of heat dissipation for the LED chip. The bonding ability of this new die-attach material is evaluated by their bonding strength. Moreover, high-power LED modules connected with nanosilver paste, Sn3Ag0.5Cu solder, and silver epoxy are aged under hygrothermal aging and temperature cycling tests. The performances of these LED modules are tested at different aging time. The results show that LED modules sintered with nanosilver paste have the best performance and stability.

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