Effect of surface passivation on the electrical performance of AlGaN/GaN high-electron-mobility transistors with slant field plates fabricated using deep-UV lithography
2015 ◽
Vol 36
(4)
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pp. 315-317
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2000 ◽
Vol 39
(S1)
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pp. 361
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2003 ◽
Vol 47
(10)
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pp. 1781-1786
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2002 ◽
Vol 149
(11)
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pp. G613
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2013 ◽
Vol 30
(9)
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pp. 097303
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