Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

2004 ◽  
Vol 84 (4) ◽  
pp. 613-615 ◽  
Author(s):  
S. Arulkumaran ◽  
T. Egawa ◽  
H. Ishikawa ◽  
T. Jimbo ◽  
Y. Sano
Keyword(s):  
Electron Mobility ◽  
Surface Passivation ◽  
High Electron Mobility Transistors ◽  
Silicon Oxynitride ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 315-317 ◽  
Author(s):  
Thanh Ngoc Thi Do ◽  
Anna Malmros ◽  
Piero Gamarra ◽  
Cedric Lacam ◽  
Marie-Antoinette Di Forte-Poisson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Surface Passivation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Noise Performance ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

2004 ◽  
Vol 84 (12) ◽  
pp. 2184-2186 ◽  
Author(s):  
Yutaka Ohno ◽  
Takeshi Nakao ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Electron Mobility ◽  
Surface Passivation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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