Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

2012 ◽  
Author(s):  
Chia-Hua Chang ◽  
Heng-Tung Hsu ◽  
Lu-Che Huang ◽  
Che-Yang Chiang ◽  
Edward Yi Chang
Keyword(s):  
Power Density ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Uv Lithography ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Deep Uv

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

2010 ◽  
Vol 7 (10) ◽  
pp. 2412-2414 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Ng Geok Ing ◽  
Vicknesh Sahmuganathan ◽  
Liu Zhihong ◽  
Bryan Maung
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Spacer Layer

Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

2008 ◽  
Vol 1068 ◽  
Author(s):  
Kazuki Nomoto ◽  
Tomo Ohsawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Ion Implanted

ABSTRACTMultiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

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