Effect of intrinsic impurities and annealing conditions on dislocation-related luminescence in self-ion-implanted Si

2016 ◽  
Vol 13 (10-12) ◽  
pp. 937-939 ◽  
Author(s):  
Dmitry Korolev ◽  
Alexey Mikhaylov ◽  
Alexey Belov ◽  
David Tetelbaum
Keyword(s):  
Annealing Conditions ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)

2018 ◽  
Vol 1 (2) ◽  
pp. 1870021 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

2002 ◽  
Vol 717 ◽  
Author(s):  
Fuccio Cristiano ◽  
Benjamin Colombeau ◽  
Bernadette de Mauduit ◽  
Caroline Bonafos ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Thermal Evolution ◽  
Extensive Study ◽  
Extended Defects ◽  
Experimental Conditions ◽  
Annealing Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Extrinsic Defects ◽  
Ion Implanted

AbstractWe present an extensive study of the thermal evolution of the extended defects found in ion implanted Si as a function of annealing conditions. We will first review their structure and energetics and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimise their formation energy. Finally, we will present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We will show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.

Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line Source

1982 ◽  
Vol 13 ◽  
Author(s):  
Y.S. Liu ◽  
H.E. Cline ◽  
G.E. Possin ◽  
H.G. Parks ◽  
W. Katz
Keyword(s):  
Line Source ◽  
Laser Annealing ◽  
Thermal Conditions ◽  
Alternative Methods ◽  
High Dose ◽  
Light Sources ◽  
Incoherent Light ◽  
Annealing Conditions ◽  
Transient Thermal ◽  
Ion Implanted

ABSTRACTRecent interest in finding an efficient method for transient annealing of ion-implanted silicon has led to studies of various rapid annealing schemes such as graphite heaters and high intensity incoherent light sources as alternative methods to laser annealing. In this paper, we describe a recent study of transient annealing of ion-implanted silicon using a scanning IR line source created by a single tungsten filament enclosed in a quartz envelope. Various dopants (B+, P+ and As+) with fluences of 1014 to 1016 ions/cm2 were implanted and annealed under both transient and steady-state thermal conditions. Dopant depth distributions were analyzed using the SIMS technique. Sheet resistance measurements indicated that almost 100% activations of the implanted dopants were achieved. Sensitivities of dopant activation to transient annealing conditions were studied as a function of dopant concentrations, and high-dose As- and B-implanted samples were found to be sensitive to transient thermal cycle, particularly to the peak temperature. Recrystallization was studied with Rutherford backscattering spectroscopy using 2 Mev He+ ions.

Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing

2001 ◽  
Vol 667 ◽  
Author(s):  
Vladimir P. Popov ◽  
Ida E. Tyschenko ◽  
Konstantin S. Zhuravlev ◽  
Ivan I. Morosov
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Film ◽  
Hydrogen Ion ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Si Nanocrystals ◽  
Heat Treated ◽  
Amorphous Si ◽  
Spectroscopy Studies ◽  
Ion Implanted

ABSTRACTH+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.

Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

2009 ◽  
Vol 156-158 ◽  
pp. 573-578
Author(s):  
N.A. Sobolev ◽  
Kalyadin ◽  
R.N. Kyutt ◽  
Elena I. Shek ◽  
V.I. Vdovin
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Structural Defects ◽  
Extended Defects ◽  
Oxygen Ions ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Higher Temperature ◽  
Dislocation Related Luminescence

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

scholarly journals The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon

2018 ◽  
Vol 1 (2) ◽  
pp. 1800038 ◽  
Author(s):  
Tom Peach ◽  
Kevin Homewood ◽  
Manon Lourenco ◽  
Mark Hughes ◽  
Kaymar Saeedi ◽  
...  
Keyword(s):  
Hyperfine Structure ◽  
Annealing Conditions ◽  
Lattice Damage ◽  
Ion Implanted

Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

2014 ◽  
Vol 12 (1-2) ◽  
pp. 84-88 ◽  
Author(s):  
D. I. Tetelbaum ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
D. S. Korolev ◽  
A. N. Shushunov ◽  
...  
Keyword(s):  
Luminescence Centers ◽  
Ion Doping ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.C. DE COOMAN ◽  
C.B. CARTER ◽  
J. RALSTON ◽  
G.W. WICKS ◽  
L.F. EASTMAN
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Strain Field ◽  
Defect Structure ◽  
Extended Defects ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage ◽  
Ion Implanted

AbstractCross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

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