Transient Annealing of Ion-Implanted Silicon Using A Scanning IR Line Source

1982 ◽  
Vol 13 ◽  
Author(s):  
Y.S. Liu ◽  
H.E. Cline ◽  
G.E. Possin ◽  
H.G. Parks ◽  
W. Katz
Keyword(s):  
Line Source ◽  
Laser Annealing ◽  
Thermal Conditions ◽  
Alternative Methods ◽  
High Dose ◽  
Light Sources ◽  
Incoherent Light ◽  
Annealing Conditions ◽  
Transient Thermal ◽  
Ion Implanted

ABSTRACTRecent interest in finding an efficient method for transient annealing of ion-implanted silicon has led to studies of various rapid annealing schemes such as graphite heaters and high intensity incoherent light sources as alternative methods to laser annealing. In this paper, we describe a recent study of transient annealing of ion-implanted silicon using a scanning IR line source created by a single tungsten filament enclosed in a quartz envelope. Various dopants (B+, P+ and As+) with fluences of 1014 to 1016 ions/cm2 were implanted and annealed under both transient and steady-state thermal conditions. Dopant depth distributions were analyzed using the SIMS technique. Sheet resistance measurements indicated that almost 100% activations of the implanted dopants were achieved. Sensitivities of dopant activation to transient annealing conditions were studied as a function of dopant concentrations, and high-dose As- and B-implanted samples were found to be sensitive to transient thermal cycle, particularly to the peak temperature. Recrystallization was studied with Rutherford backscattering spectroscopy using 2 Mev He+ ions.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

The Role Of Ge In Cluster Formation In B And Bf2 Implanted Si Wafers After Ge Pre-Amorphization

2003 ◽  
Vol 792 ◽  
Author(s):  
M. Alper Sahiner ◽  
Charles W. Magee ◽  
Daniel F. Downey ◽  
Edwin Arevalo ◽  
Joseph C. Woicik
Keyword(s):  
Laser Annealing ◽  
Structural Information ◽  
Cluster Formation ◽  
Point Of View ◽  
High Dose ◽  
Silicon Doping ◽  
Annealing Conditions ◽  
X Ray Absorption ◽  
Structural Point

ABSTRACTCluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2 implanted Si wafers in order to probe these clusters from a local structural point of view. Ge K-edge x-ray absorption spectroscopy (XAFS) is a powerful tool in obtaining local structural information around the Ge atom. The effects of different implant species with various implant doses and annealing conditions on the cluster formation are presented using Ge K-edge multi-shell XAFS analysis. The non-linear least-squares fits to the Ge K-edge Fourier Transformed (FT) XAFS data using calculated standards from multiple scattering simulations around the Ge atom reveal formed Ge-B clusters for the Rapid Thermal Processing (RTP) annealed wafers. The results also indicate the laser annealing process on the other hand is blocking the formation of these Ge induced Ge-B clusters.

Silicide formation by pulsed-incoherent-light annealing

1985 ◽  
Vol 63 (6) ◽  
pp. 876-880 ◽  
Author(s):  
P. K. John ◽  
S. Gecim ◽  
Y. Suda ◽  
B. Y. Tong ◽  
S. K. Wong
Keyword(s):  
Laser Annealing ◽  
Incident Light ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Incoherent Light ◽  
Rutherford Back Scattering ◽  
Annealing Conditions ◽  
Scanning Auger Microprobe ◽  
Back Scattering ◽  
Mixed Layers

Nickel silicide formation is studied using a pulsed incoherent light source of variable duration in the range 5-50 μs. The potential advantages of the arc source over other pulsed techniques such as electron (e)-beam and laser annealing are simplicity, higher electrical-conversion efficiency, and larger area processing. The plasma arc provided incident light energy density in the range 5–45 J/cm2, and our results indicate that mixed layers of nickel and silicon can be produced using this source at about 45 J/cm2. It was found that a thin layer of amorphous silicon on the nickel enhanced light absorption and mixing. Rutherford back scattering and scanning Auger microprobe techniques were used to characterize the mixed layers. The incoherent light annealing is believed to be a rapid thermal process, which in our case results either in solid- or liquid-phase epitaxial regrowth depending on the annealing conditions.

Pulsed laser annealing of high-dose Ag+-ion implanted Si layer

2017 ◽  
Vol 51 (1) ◽  
pp. 015109 ◽  
Author(s):  
R I Batalov ◽  
V I Nuzhdin ◽  
V F Valeev ◽  
V V Vorobev ◽  
Yu N Osin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

scholarly journals Concrete strains under transient thermal conditions: A state-of-the-art review

2016 ◽  
Vol 127 ◽  
pp. 172-188 ◽  
Author(s):  
Giacomo Torelli ◽  
Parthasarathi Mandal ◽  
Martin Gillie ◽  
Van-Xuan Tran
Keyword(s):  
State Of The Art ◽  
Thermal Conditions ◽  
Transient Thermal

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

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