Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

2014 ◽  
Vol 12 (1-2) ◽  
pp. 84-88 ◽  
Author(s):  
D. I. Tetelbaum ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
D. S. Korolev ◽  
A. N. Shushunov ◽  
...  
Keyword(s):  
Luminescence Centers ◽  
Ion Doping ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

Luminescence Centers in High-Energy Ion-Implanted Silicon

1997 ◽  
Vol 258-263 ◽  
pp. 587-592 ◽  
Author(s):  
Koichi Terashima ◽  
Taeko Ikarashi ◽  
Masahito Watanabe ◽  
Tomohisa Kitano
Keyword(s):  
High Energy ◽  
Luminescence Centers ◽  
Ion Implanted

Effect of intrinsic impurities and annealing conditions on dislocation-related luminescence in self-ion-implanted Si

2016 ◽  
Vol 13 (10-12) ◽  
pp. 937-939 ◽  
Author(s):  
Dmitry Korolev ◽  
Alexey Mikhaylov ◽  
Alexey Belov ◽  
David Tetelbaum
Keyword(s):  
Annealing Conditions ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices

2008 ◽  
Vol 91 (1) ◽  
pp. 123-126 ◽  
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
A.N. Nazarov ◽  
I.N. Osiyuk ◽  
I.P. Tjagulskii ◽  
...  
Keyword(s):  
Rare Earth ◽  
Metal Oxide ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Luminescence Centers ◽  
Metal Oxide Silicon ◽  
Ion Implanted

Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

2009 ◽  
Vol 156-158 ◽  
pp. 573-578
Author(s):  
N.A. Sobolev ◽  
Kalyadin ◽  
R.N. Kyutt ◽  
Elena I. Shek ◽  
V.I. Vdovin
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Structural Defects ◽  
Extended Defects ◽  
Oxygen Ions ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Higher Temperature ◽  
Dislocation Related Luminescence

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

Indium Ion Doping During Si Molecular Beam Epitaxy

1987 ◽  
Vol 93 ◽  
Author(s):  
N. Hirashita ◽  
J.-P. Noel ◽  
A. Rockett ◽  
L. Markert ◽  
J.E. Greene ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Sites ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Phonon Scattering ◽  
Ion Source ◽  
Entire Concentration Range ◽  
Ion Doping ◽  
Si Films ◽  
Ion Implanted

ABSTRACTA single-grid UHV-compatible ion source was used to provide partially-ionized accelerated In+ dopant beams during Si growth by molecular beam epitaxy (MBE). Indium incorporation probabilities in 800 °C MBE Si(100). as measured by secondary ion mass spectrometry, ranged from < 10−5 (the detection limit) for thermal In to values of 0.02–0.7 for In+ acceleration energies EIn, between 50 and 400 eV. Temperature-dependent Hall-effect and resistivity measurements were carried out on Si films grown at 800 °C with EIn = 200 eV. Indium was incorporated substitutionally in electrically active sites over the entire concentration range examined. 1016— 1019 cm−3, with an acceptor level ionization energy of 165 meV. The 111 meV level associated with In-C complexes and the 18 meV “supershallow” level reported for In ion-implanted Si were not observed. Roomtemperature hole mobilities μ were higher than both annealed In-ion-implanted Si and Irvin's values for bulk Si. Phonon scattering was found to dominate at temperatures between 100 and 330 K and μ varied as T−22.

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

2011 ◽  
Vol 178-179 ◽  
pp. 341-346 ◽  
Author(s):  
N.A. Sobolev ◽  
Anton E. Kalyadin ◽  
Elena I. Shek ◽  
V.I. Vdovin ◽  
David I. Tetel`baum ◽  
...  
Keyword(s):  
Structural Properties ◽  
Structural Defects ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Post Implantation ◽  
Dislocation Related Luminescence

Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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