Indium Ion Doping During Si Molecular Beam Epitaxy

1987 ◽  
Vol 93 ◽  
Author(s):  
N. Hirashita ◽  
J.-P. Noel ◽  
A. Rockett ◽  
L. Markert ◽  
J.E. Greene ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Sites ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Phonon Scattering ◽  
Ion Source ◽  
Entire Concentration Range ◽  
Ion Doping ◽  
Si Films ◽  
Ion Implanted

ABSTRACTA single-grid UHV-compatible ion source was used to provide partially-ionized accelerated In+ dopant beams during Si growth by molecular beam epitaxy (MBE). Indium incorporation probabilities in 800 °C MBE Si(100). as measured by secondary ion mass spectrometry, ranged from < 10−5 (the detection limit) for thermal In to values of 0.02–0.7 for In+ acceleration energies EIn, between 50 and 400 eV. Temperature-dependent Hall-effect and resistivity measurements were carried out on Si films grown at 800 °C with EIn = 200 eV. Indium was incorporated substitutionally in electrically active sites over the entire concentration range examined. 1016— 1019 cm−3, with an acceptor level ionization energy of 165 meV. The 111 meV level associated with In-C complexes and the 18 meV “supershallow” level reported for In ion-implanted Si were not observed. Roomtemperature hole mobilities μ were higher than both annealed In-ion-implanted Si and Irvin's values for bulk Si. Phonon scattering was found to dominate at temperatures between 100 and 330 K and μ varied as T−22.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4554-4557 ◽  
Author(s):  
Kazuhiro Nakamura ◽  
Hirofumi Shimizu ◽  
Jun Kodera ◽  
Katsuhiro Yokota
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Films

Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

1998 ◽  
Vol 72 (7) ◽  
pp. 845-847 ◽  
Author(s):  
Lyu-fan Zou ◽  
Z. G. Wang ◽  
D. Z. Sun ◽  
T. W. Fan ◽  
X. F. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source ◽  
Ion Implanted

Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 16 (11) ◽  
pp. 3266-3273 ◽  
Author(s):  
C. H. Lin ◽  
R. J. Hwu ◽  
L. P. Sadwick
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Gaas Layer ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Crystal Properties ◽  
Device Applications ◽  
Composition Profiles

Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs layer are stacking faults or microtwins, and they directly correlated with the islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion mass spectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Interface Roughness ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Comparison Of The Results ◽  
Si Films

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.

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