Influence of oxygen on the dislocation related luminescence centers in silicon

2005 ◽  
Vol 2 (6) ◽  
pp. 1837-1841 ◽  
Author(s):  
E. A. Steinman
Keyword(s):  
Luminescence Centers ◽  
Dislocation Related Luminescence

Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

2009 ◽  
Vol 156-158 ◽  
pp. 573-578
Author(s):  
N.A. Sobolev ◽  
Kalyadin ◽  
R.N. Kyutt ◽  
Elena I. Shek ◽  
V.I. Vdovin
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Structural Defects ◽  
Extended Defects ◽  
Oxygen Ions ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Higher Temperature ◽  
Dislocation Related Luminescence

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

2014 ◽  
Vol 12 (1-2) ◽  
pp. 84-88 ◽  
Author(s):  
D. I. Tetelbaum ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
D. S. Korolev ◽  
A. N. Shushunov ◽  
...  
Keyword(s):  
Luminescence Centers ◽  
Ion Doping ◽  
Dislocation Related Luminescence ◽  
Ion Implanted

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

2011 ◽  
Vol 178-179 ◽  
pp. 341-346 ◽  
Author(s):  
N.A. Sobolev ◽  
Anton E. Kalyadin ◽  
Elena I. Shek ◽  
V.I. Vdovin ◽  
David I. Tetel`baum ◽  
...  
Keyword(s):  
Structural Properties ◽  
Structural Defects ◽  
Luminescence Centers ◽  
Annealing Conditions ◽  
Silicon Ions ◽  
Post Implantation ◽  
Dislocation Related Luminescence

Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

Oxygen Vacancies in Zirconium Oxide as the Blue Luminescence Centers and Traps Responsible for Charge Transport

2020 ◽  
Author(s):  
Damir R. Islamov ◽  
Vladimir A. Gritsenko ◽  
Timofey V. Perevalov ◽  
Vladimir Sh. Aliev ◽  
Alexander P. Yelisseyev ◽  
...  
Keyword(s):  
Charge Transport ◽  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Blue Luminescence ◽  
Luminescence Centers

scholarly journals Achievement of narrow-band blue-emitting phosphors KScSr1−yCaySi2O7:Bi3+ by the migration of luminescence centers

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12568-12577
Author(s):  
Yao Yao ◽  
Zhijun Wang ◽  
Lingwei Cao ◽  
Mingjie Zheng ◽  
Xuejiao Wang ◽  
...  
Keyword(s):  
Narrow Band ◽  
Luminescence Centers

Narrow-band blue emitting phosphor KScSr1−yCaySi2O7:0.07Bi3+ with FWHM 40 nm.

Luminescence Centers in High-Energy Ion-Implanted Silicon

1997 ◽  
Vol 258-263 ◽  
pp. 587-592 ◽  
Author(s):  
Koichi Terashima ◽  
Taeko Ikarashi ◽  
Masahito Watanabe ◽  
Tomohisa Kitano
Keyword(s):  
High Energy ◽  
Luminescence Centers ◽  
Ion Implanted

Photostimulated formation of sensitized anti-Stokes luminescence centers in AgCl(I) microcrystals

2007 ◽  
Vol 103 (3) ◽  
pp. 482-489 ◽  
Author(s):  
O. V. Ovchinnikov ◽  
M. S. Smirnov ◽  
A. N. Latyshev ◽  
D. I. Stasel’ko
Keyword(s):  
Luminescence Centers ◽  
Anti Stokes

Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2layers

1994 ◽  
Vol 64 (24) ◽  
pp. 3282-3284 ◽  
Author(s):  
J. Lin ◽  
L. Z. Zhang ◽  
Y. M. Huang ◽  
B. R. Zhang ◽  
G. G. Qin
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Luminescence Centers

Effect of boron on interstitial-related luminescence centers in silicon

2010 ◽  
Vol 96 (5) ◽  
pp. 051906 ◽  
Author(s):  
S. Charnvanichborikarn ◽  
B. J. Villis ◽  
B. C. Johnson ◽  
J. Wong-Leung ◽  
J. C. McCallum ◽  
...  
Keyword(s):  
Luminescence Centers
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