III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Y. Cai; Y. G. Zhou; K. J. Chen; K. M. Lau

doi:10.1063/1.1855403

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Applied Physics Letters ◽

10.1063/1.1855403 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032109 ◽

Cited By ~ 16

Author(s):

Y. Cai ◽

Y. G. Zhou ◽

K. J. Chen ◽

K. M. Lau

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

10.7567/ssdm.2013.j-2-2 ◽

2013 ◽

Author(s):

T.Q. Nguyen ◽

T. Ui ◽

M. Kudo ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Low-Frequency Noise in AlTiO/AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors

10.7567/ssdm.2015.m-2-5 ◽

2015 ◽

Author(s):

S.P. Le ◽

T. Ui ◽

T.Q. Nguyen ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201300290 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1401-1404 ◽

Cited By ~ 7

Author(s):

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Fabrication And Characterization ◽

Heterojunction Field Effect Transistors

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Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition

Nanotechnology ◽

10.1088/1361-6528/abc98c ◽

2020 ◽

Vol 32 (8) ◽

pp. 085709

Author(s):

Se-Na Choi ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Gate Electrode ◽

Gate Stack ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.125395 ◽

2020 ◽

Vol 532 ◽

pp. 125395 ◽

Cited By ~ 1

Author(s):

Taofei Pu ◽

Xiaobo Li ◽

Taowei Peng ◽

Tian Xie ◽

Liuan Li ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Structure ◽

Heterojunction Field Effect Transistors

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Low-frequency Noise of Intrinsic Gated Region in AlN/AlGaN/GaN Metal-insulator-semiconductor Heterojunction Field-effect Transistors

10.7567/ssdm.2014.e-1-5 ◽

2014 ◽

Author(s):

S.P. Le ◽

T.Q. Nguyen ◽

H. Shih ◽

M. Kudo ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4952386 ◽

2016 ◽

Vol 119 (20) ◽

pp. 204503 ◽

Cited By ~ 6

Author(s):

Son Phuong Le ◽

Toshimasa Ui ◽

Tuan Quy Nguyen ◽

Hong-An Shih ◽

Toshi-kazu Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2037458 ◽

2010 ◽

Vol 57 (2) ◽

pp. 368-372 ◽

Cited By ~ 29

Author(s):

Masayuki Kuroda ◽

Tetsuzo Ueda ◽

Tsuyoshi Tanaka

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process

Journal of Materials Chemistry C ◽

10.1039/d0tc01105c ◽

2020 ◽

Vol 8 (21) ◽

pp. 7120-7131 ◽

Cited By ~ 5

Author(s):

Dae-Hong Min ◽

Tae-Hyun Ryu ◽

So-Jung Yoon ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Field Effect ◽

Field Effect Transistors ◽

Deposition Process ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Sputtering Deposition ◽

Partial Pressures

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using HfxZr1−xO2 thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.

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