Epitaxial growth of high-quality Mgx Zn1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material

2012 ◽  
Vol 9 (8-9) ◽  
pp. 1813-1816 ◽  
Author(s):  
T. Abe ◽  
A. Nakagawa ◽  
M. Tanaka ◽  
M. Nakagawa ◽  
H. Endo ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Source Material ◽  
High Quality ◽  
Evaporation Method ◽  
Reactive Evaporation

Epitaxial growth of NiO/Pd superlattices by reactive evaporation method

2000 ◽  
Vol 374 (1) ◽  
pp. 21-26 ◽  
Author(s):  
T Manago ◽  
T Ono ◽  
H Miyajima ◽  
I Yamaguchi ◽  
K Kawaguchi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Evaporation Method ◽  
Reactive Evaporation

Characteristics of high-quality homoepitaxial ZnO (0001) films grown by the plasma-assisted reactive evaporation method

2009 ◽  
Vol 6 (S1) ◽  
pp. S119-S122 ◽  
Author(s):  
A. Nakagawa ◽  
T. Abe ◽  
S. Chiba ◽  
H. Endo ◽  
K. Meguro ◽  
...  
Keyword(s):  
High Quality ◽  
Evaporation Method ◽  
Reactive Evaporation

Epitaxial Growth Of High Quality Sic By Sublimation Close Space Technique

1997 ◽  
Vol 483 ◽  
Author(s):  
S. Nishino ◽  
T. Yoshida ◽  
Y. Nishio
Keyword(s):  
Growth Rate ◽  
Raman Spectroscopy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Source Material ◽  
Growth Time ◽  
Power Devices ◽  
High Quality ◽  
Specular Surface ◽  
Space Technique

AbstractSemiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 μ m/h. To make a thick epilayer, more than 10 hours are needed. To minimize the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source ( polycrystalline 3C–SiC plate) and substrate is closely separated by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular surface were obtained on 6H–SiC substrates at a substrate temperature around 2200 °C and growth rate was about 100 μ/h. Nitrogen-bound exciton was observed by PL measurement at 2 K in the epilayer when 3C–SiC plate with high purity was employed as the source material. Crystallinity of the epilayer was characterized by Raman spectroscopy.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

1988 ◽  
Vol 129 ◽  
Author(s):  
K. L. Tokuda ◽  
B. Pihlstrom ◽  
D. W. Kisker ◽  
M. Lamont Schnoes ◽  
G. J. Collins
Keyword(s):  
Growth Process ◽  
Vacuum Ultraviolet ◽  
Source Material ◽  
Organometallic Vapor Phase Epitaxy ◽  
Impurity Incorporation ◽  
High Quality ◽  
Selenium Compound ◽  
Ultraviolet Photons ◽  
Reduced Toxicity ◽  
Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

scholarly journals Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)]

1995 ◽  
Vol 77 (11) ◽  
pp. 6073-6073 ◽  
Author(s):  
Y. Yano ◽  
K. Iijima ◽  
Y. Daitoh ◽  
T. Terashima ◽  
Y. Bando ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Pt Electrodes

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Low Energy ◽  
High Quality ◽  
Lithography Process ◽  
Luminescence Efficiency ◽  
Surface Steps ◽  
Inp Substrates ◽  
Vacuum Lithography

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer

2003 ◽  
Vol 93 (7) ◽  
pp. 3837-3843 ◽  
Author(s):  
Manoj Kumar ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
M. Ishida ◽  
A. Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
High Quality
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