Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer

2003 ◽  
Vol 93 (7) ◽  
pp. 3837-3843 ◽  
Author(s):  
Manoj Kumar ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
M. Ishida ◽  
A. Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
High Quality

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1992 ◽  
Vol 61 (22) ◽  
pp. 2688-2690 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Zno Buffer Layer ◽  
Gan Film

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

1986 ◽  
Vol 48 (5) ◽  
pp. 353-355 ◽  
Author(s):  
H. Amano ◽  
N. Sawaki ◽  
I. Akasaki ◽  
Y. Toyoda
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

Thin CuInS2 Films Prepared by MOMBE: Interface and Surface Properties

2005 ◽  
Vol 865 ◽  
Author(s):  
C. Pettenkofer ◽  
C. Lehmann ◽  
W. Calvet
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Surface Properties ◽  
Considerable Effect ◽  
Organic Sulfur ◽  
Interface Morphology ◽  
High Quality ◽  
Leed Pattern ◽  
Diffraction Patterns

AbstractCuInS2 films were prepared on Si(111) by MOMBE using standard MBE Cu and In sources and Ditertbutyldisulfide (TBDS) as an organic sulfur precursor. The films were analyzed in situ by XPS, LEED and UPS. Deposition at 250°C yields chalcopyrite films [1] with admixtures of CuSi2 and CuIn alloys. Deposition at higher temperatures up to 550°C was used to clarify the feasibility of the process. High quality LEED diffraction patterns show epitaxial growth but CuSi2 precipitations are still observed for deposition on Si(111). A buffer layer of indiumsulfide showed no considerable effect on the interface morphology. The obtained LEED pattern are in accordance with the epitaxial relation Si{111}||CuInS2{112}. Even for temperatures as high as 550°C no incorporation of Carbon or residual hydrocarbons in the film or adsorbed at the surface were detected.

Y2O3 Buffer Layer for High-quality ZnO Epitaxial Growth on Si(111)

2008 ◽  
Author(s):  
W. R. Liu ◽  
Y. H. Li ◽  
W. F. Hsieh ◽  
C. H. Hsu ◽  
W. C. Lee ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
High Quality

Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer

2016 ◽  
Vol 858 ◽  
pp. 159-162 ◽  
Author(s):  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Riccardo Reitano ◽  
Alessandra Alberti ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
High Quality ◽  
Wafer Curvature ◽  
Carbonization Process ◽  
Cubic Silicon Carbide ◽  
Sic Film

A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been reported in this work. From this study it has been evidenced the importance of the C/H2 ratio and of the buffer layer process on the voids formation at the 3C-SiC/Si interface. From our study, the influence of the voids the wafer curvature is highlighted. It has been observed that decreasing the density of these voids, decreases the stress of the 3C-SiC film; consequently, the wafer curvature is reduced.

Epitaxial Growth of La2Zr2O7 Buffer Layer on Textured Ni5W Substrate by the Nitrate Route

2011 ◽  
Vol 26 (5) ◽  
pp. 481-485
Author(s):  
Yan-Ling CHENG ◽  
Hong-Li SUO ◽  
Min LIU ◽  
Lin MA ◽  
Teng ZHANG
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Epitaxial growth of ZnO film on Si(1 1 1) with CeO2(1 1 1) as buffer layer

2012 ◽  
Vol 45 (41) ◽  
pp. 415306 ◽  
Author(s):  
T I Wong ◽  
H R Tan ◽  
D Sentosa ◽  
L M Wong ◽  
S J Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Zno Film
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