Epitaxial Growth Of High Quality Sic By Sublimation Close Space Technique

1997 ◽  
Vol 483 ◽  
Author(s):  
S. Nishino ◽  
T. Yoshida ◽  
Y. Nishio
Keyword(s):  
Growth Rate ◽  
Raman Spectroscopy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Source Material ◽  
Growth Time ◽  
Power Devices ◽  
High Quality ◽  
Specular Surface ◽  
Space Technique

AbstractSemiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 μ m/h. To make a thick epilayer, more than 10 hours are needed. To minimize the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source ( polycrystalline 3C–SiC plate) and substrate is closely separated by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular surface were obtained on 6H–SiC substrates at a substrate temperature around 2200 °C and growth rate was about 100 μ/h. Nitrogen-bound exciton was observed by PL measurement at 2 K in the epilayer when 3C–SiC plate with high purity was employed as the source material. Crystallinity of the epilayer was characterized by Raman spectroscopy.

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique

2008 ◽  
Vol 600-603 ◽  
pp. 1285-1288
Author(s):  
Gi Sub Lee ◽  
Myung Ok Kyun ◽  
Hyun Hee Hwang ◽  
Joon Ho An ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Layer ◽  
Growth Time ◽  
Closed Space ◽  
Polycrystalline Structure ◽  
Average Growth Rate ◽  
Average Growth ◽  
Epitaxial Structure ◽  
Space Technique

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlN epitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8o off-axis (0001) plane tilted toward the <11 2 0> direction and on-axis 4H-SiC (0001). An average growth rate of AlN layer at 2350oC in 500 Torr of N2 was measured to be about 6μm/hr. While AlN layer grown on the 3C-SiC (100) substrate at 2350oC exhibited polycrystalline structure, AlN epitaxial layer grown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure. In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the size of the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalesced and the step-bunching was finally disappeared.

Improvement of Quality of Thick 4H-SiC Epilayers

2017 ◽  
Vol 897 ◽  
pp. 59-62 ◽  
Author(s):  
Akira Miyasaka ◽  
Kazutoshi Kojima ◽  
Kenji Momose ◽  
Hiroshi Osawa ◽  
Hajime Okumura
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Stacking Faults ◽  
Power Devices ◽  
Concentration Depth Profile ◽  
Interfacial Dislocations ◽  
By Products ◽  
Dopant Element

The epitaxial growth of ~250 μm thick 4H-SiC epilayers has been demanded for ultra-high-voltage power devices. We have attempted to improve the quality of thick epilayers. At the edge of wafer, stacking faults, epi-crown and interfacial dislocations could be well suppressed by controlling the distribution of growth rate. Investigation of carrier concentration depth profile revealed that increasing surface roughness increased the carrier concentration during thick epitaxial growth. Under N2-doped growth condition, memory effect by accumulation of by-products containing dopant element is also one of the reasons of the carrier concentration increasing during the growth.

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

2018 ◽  
Vol 924 ◽  
pp. 104-107
Author(s):  
Wei Li Lu ◽  
Jia Li ◽  
Yu Long Fang ◽  
Jia Yun Yin ◽  
Zhi Hong Feng
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
High Throughput ◽  
High Voltage ◽  
High Performance ◽  
Etching Process ◽  
Power Devices ◽  
High Quality ◽  
Recent Advances

High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 193-196 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
High Quality ◽  
Substrate Quality ◽  
Large Growth

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

2014 ◽  
Vol 778-780 ◽  
pp. 109-112 ◽  
Author(s):  
Johji Nishio ◽  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Keiko Masumoto ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
High Throughput ◽  
Doping Concentration ◽  
Current Data ◽  
Power Mosfets ◽  
Specular Surface ◽  
Blocking Voltage

C-face epitaxial growth of 4H-SiC was investigated considering the use as drift layers of high blocking voltage SiC power MOSFETs, such as 3.3 kV, using a multiple-wafer epitaxy system. As high as 50.9 μm/h was achieved as the growth rate while maintaining specular surface within quasi-150 mm-diameter wafers. Also, it has been found that the background carrier concentration could be lowered enough to control the desiredn-type doping concentration of nitrogen. In addition, high-throughput has been confirmed by comparing the current data with the recent results reported.

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 193-196 ◽  
Author(s):  
Akira Miyasaka ◽  
Jun Norimatsu ◽  
Keisuke Fukada ◽  
Yutaka Tajima ◽  
Yoshiaki Kageshima ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Production Technology ◽  
Smooth Surface ◽  
Growth Parameters ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
High Uniformity

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.

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