Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 9 (3-4) ◽  
pp. 798-801 ◽  
Author(s):  
Yitao Liao ◽  
Chen-kai Kao ◽  
C. Thomidis ◽  
A. Moldawer ◽  
J. Woodward ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Recent Progress ◽  
Deep Uv ◽  
Uv Leds

Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

2009 ◽  
Vol 1202 ◽  
Author(s):  
Yitao Liao ◽  
Christos Thomidis ◽  
Anirban Bhattacharyya ◽  
Chen-kai Kao ◽  
Adam Moldawer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Light Extraction Efficiency ◽  
Rf Plasma ◽  
Wafer Level ◽  
Deep Uv ◽  
Uv Leds

AbstractIn this paper, we report the development of AlGaN-based deep ultraviolet LEDs by rf plasma-assisted molecular beam epitaxy (MBE) emitting between 277 and 300 nm. Some of these devices were evaluated after fabrication at bare-die and some at wafer-level configurations. Devices with total optical output of 1.3 mW at injection current of 200 mA were produced, with maximum external quantum efficiency (EQE) of 0.16%. These performance values are equivalent to those reported for deep UV-LEDs grown by the Metalorganic chemical vapor deposition (MOCVD) method and measured at bare-die configuration. In parallel, we have evaluated the internal quantum efficiency (IQE) of AlGaN quantum wells, and found that such wells emitting at 250 nm have an IQE of 50%. From the analysis of these data, we concluded that the efficiency of deep UV LEDs is not limited by the IQE but by the light extraction efficiency, injection efficiency or a combination of both.

Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

1997 ◽  
Vol 2 ◽  
Author(s):  
Markus Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Molecular Beam Epitaxy ◽  
Material Properties ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Surface Cracking ◽  
Organic Vapor ◽  
N Doping ◽  
Metal Organic ◽  
Uv Leds

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

ChemInform Abstract: Recent Progress in Molecular Beam Epitaxy of HgCdTe

ChemInform ◽  
2010 ◽  
Vol 30 (45) ◽  
pp. no-no
Author(s):  
Li He ◽  
Jianrong Yang ◽  
Shanli Wang ◽  
Yan Wu ◽  
Weizheng Fang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Recent Progress

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)

1987 ◽  
Vol 102 ◽  
Author(s):  
R. T. Tung ◽  
J. L. Batstone ◽  
S. M. Yalisove
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Recent Progress ◽  
Paper Briefly

ABSTRACTThe growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

2007 ◽  
Vol 19 (8-9) ◽  
pp. 764-769 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Gas Source ◽  
Deep Uv

scholarly journals Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

2018 ◽  
Vol 124 (13) ◽  
pp. 139901
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv
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