Ultrathin Single Crystal CoSi2 Layers on Si(111) and Si(100)
Keyword(s):
ABSTRACTThe growth of ultrathin epitaxial CoSi2 layers on Si by molecular beam epitaxy has been studied. This paper briefly outlines recent progress in the growth on Si(111) substrates. New results on the growth of epitaxial CoSi2 on Si(100) are also presented.
1982 ◽
Vol 20
(3)
◽
pp. 731-732
◽
2003 ◽
Vol 251
(1-4)
◽
pp. 465-470
◽
1990 ◽
Vol 99
(1-4)
◽
pp. 451-454
◽
Keyword(s):
1976 ◽
Vol 15
(6)
◽
pp. 1001-1007
◽
2002 ◽
Vol 234
(3)
◽
pp. 855-858
1995 ◽
Vol 150
◽
pp. 1154-1158
◽
Keyword(s):
Keyword(s):