scholarly journals Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

2018 ◽  
Vol 124 (13) ◽  
pp. 139901
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

2017 ◽  
Vol 122 (9) ◽  
pp. 095302 ◽  
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv

Characterization of GaAs thin films grown by molecular beam epitaxy on Si-on-insulator

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1078
Author(s):  
Zhu Wenhua ◽  
Lin Chenglu ◽  
Yu Yuehui ◽  
Li Aizhen ◽  
Zou Shichang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Growth of InN By MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Series Of Experiments

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 124104 ◽  
Author(s):  
H. Shibata ◽  
H. Tampo ◽  
K. Matsubara ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

2007 ◽  
Vol 301-302 ◽  
pp. 552-555 ◽  
Author(s):  
J. Ibáñez ◽  
M. Henini ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Schmidbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gaas Substrates

Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Good Crystallinity ◽  
Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy

2013 ◽  
Vol 62 (12) ◽  
pp. 2109-2112 ◽  
Author(s):  
Shinya Senba ◽  
Naoki Matsumoto ◽  
Mitsuhiro Jomura ◽  
Hironori Asada ◽  
Tsuyoshi Koyanagi ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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