Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2424-2426
Author(s):  
Takayuki Sugiyama ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
Hiroshi Amano ◽  
Yoshinori Oshimura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Effects ◽  
Bias Stress ◽  
Heterostructure Field Effect Transistors ◽  
Drain Bias ◽  
Gan Heterostructure

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

2013 ◽  
Vol 22 (6) ◽  
pp. 067104 ◽  
Author(s):  
Yuan-Jie Lü ◽  
Zhi-Hong Feng ◽  
Shu-Jun Cai ◽  
Shao-Bo Dun ◽  
Bo Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Drain Bias ◽  
Gan Heterostructure

Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Q. Chen ◽  
J. W. Yang ◽  
M. A. Khan ◽  
A. T. Ping ◽  
I. Adesida
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Channel Current ◽  
Heterostructure Field Effect Transistors ◽  
High Power Operation ◽  
Drain Bias ◽  
Gan Heterostructure ◽  
High Transconductance ◽  
P Type

AbstractHigh quality AJGaN/GaN heterostructures have been successfully deposited on both nand p-type SiC substrates. Heterostructure field effect transistors fabricated using these layers exhibited high channel current density (1.71 A/mm), well behaved pinch-off characteristics, and excellent extrinsic transconductance (Gm = 229 mS/mm). There is negligible channel current degradation up to a source to drain bias of 20 V as opposed to devices grown on sapphire substrates. The 0.25 μm gate-length devices fabricated on the heterostructures grown on p-type SiC has allowed us to extract a cutoff frequency of 53 GHz. The cutoff frequency showed little deterioration with increasing drain bias voltage. These results demonstrate for the first time the high frequency and high power operation potential of the heterostructure field effect transistors based on AlGaN grown on SiC.

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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