Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy

1997 ◽  
Vol 71 (8) ◽  
pp. 1095-1097 ◽  
Author(s):  
D. J. Friedman ◽  
A. E. Kibbler ◽  
R. Reedy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Substrate Orientation ◽  
Phosphorus Flux ◽  
P Type ◽  
Selection Of

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type
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