Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

2009 ◽  
Vol 6 (S2) ◽  
pp. S352-S355 ◽  
Author(s):  
Frank Lipskil ◽  
Sarad B. Thapa ◽  
Joachim Hertkorn ◽  
Thomas Wunderer ◽  
Stephan Schwaiger ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Zno Buffer Layer

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method

2016 ◽  
Vol 9 (4) ◽  
pp. 045501 ◽  
Author(s):  
Xue-Hua Liu ◽  
Ji-Cai Zhang ◽  
Xu-Jun Su ◽  
Jun Huang ◽  
Shu-Nan Zheng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Etching Method ◽  
Aln Film

A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

2013 ◽  
Vol 6 (12) ◽  
pp. 125502 ◽  
Author(s):  
Moonsang Lee ◽  
Dmitry Mikulik ◽  
Joosung Kim ◽  
Youngjo Tak ◽  
Junyoun Kim ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Growth Method

Effect of aluminum carbide buffer layer on growth and self-separation ofm-plane GaN by hydride vapor phase epitaxy

2009 ◽  
Vol 206 (6) ◽  
pp. 1160-1163 ◽  
Author(s):  
Hitoshi Sasaki ◽  
Haruo Sunakawa ◽  
Norihiko Sumi ◽  
Kazutomi Yamamoto ◽  
Akira Usui
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Aluminum Carbide ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template

2009 ◽  
Vol 63 (11) ◽  
pp. 943-945 ◽  
Author(s):  
Chaotong Lin ◽  
Guanghui Yu ◽  
Xinzhong Wang ◽  
Mingxia Cao ◽  
Haifeng Lu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Gan Film

scholarly journals Photoluminescence and Photoluminescence Excitation Spectroscopy of in Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 946-951
Author(s):  
S. Kim ◽  
X. Li ◽  
J. J. Coleman ◽  
R. Zhang ◽  
D. M. Hansen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Absorption Bands ◽  
Pl Spectra ◽  
Er Doped

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 → 4I15/2 emission of Er3+ in in situ Er-doped and Erimplanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er3+ sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH3/H2 atmosphere.

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers
Sign in / Sign up

Export Citation Format

Share Document