Effect of aluminum carbide buffer layer on growth and self-separation ofm-plane GaN by hydride vapor phase epitaxy

2009 ◽  
Vol 206 (6) ◽  
pp. 1160-1163 ◽  
Author(s):  
Hitoshi Sasaki ◽  
Haruo Sunakawa ◽  
Norihiko Sumi ◽  
Kazutomi Yamamoto ◽  
Akira Usui
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Aluminum Carbide ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

2009 ◽  
Vol 6 (S2) ◽  
pp. S352-S355 ◽  
Author(s):  
Frank Lipskil ◽  
Sarad B. Thapa ◽  
Joachim Hertkorn ◽  
Thomas Wunderer ◽  
Stephan Schwaiger ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Zno Buffer Layer

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxy

1997 ◽  
Vol 26 (8) ◽  
pp. 898-902 ◽  
Author(s):  
Heon Lee ◽  
Masaaki Yuri ◽  
Tetsuzo Ueda ◽  
James S. Harris ◽  
Kyusik Sin
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JA08 ◽  
Author(s):  
Tadashige Sato ◽  
Shinya Okano ◽  
Takenari Goto ◽  
Takafumi Yao ◽  
Ritsu Seto ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing
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