Capacitance response due to recharging of extended defects attached to the edge of the space charge region of the Schottky diode

2005 ◽  
Vol 2 (6) ◽  
pp. 1917-1923 ◽  
Author(s):  
O. Vyvenko
Keyword(s):  
Space Charge ◽  
Schottky Diode ◽  
Space Charge Region ◽  
Extended Defects ◽  
Capacitance Response

Drift of interstitial iron in a space charge region of p-type Si Schottky diode

1999 ◽  
Vol 273-274 ◽  
pp. 395-397 ◽  
Author(s):  
S Koveshnikov ◽  
B Choi ◽  
N Yarykin ◽  
G Rozgonyi
Keyword(s):  
Space Charge ◽  
Schottky Diode ◽  
Space Charge Region ◽  
P Type

Space charge region effects in bidirectional illuminated P3HT:PCBM bulk heterojunction photodetectors

2015 ◽  
Vol 22 ◽  
pp. 29-34 ◽  
Author(s):  
Patric Büchele ◽  
Mauro Morana ◽  
Diego Bagnis ◽  
Sandro Francesco Tedde ◽  
David Hartmann ◽  
...  
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Bulk Heterojunction

Influence of a space charge region on charge carrier kinetics in silicon wafers

2002 ◽  
Vol 91 (11) ◽  
pp. 9147-9150 ◽  
Author(s):  
S. von Aichberger ◽  
O. Abdallah ◽  
F. Wünsch ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Wafers

Surface defect chemistry of Y-substituted and hydrated BaZrO3 with subsurface space-charge regions

2016 ◽  
Vol 4 (19) ◽  
pp. 7437-7444 ◽  
Author(s):  
Jonathan M. Polfus ◽  
Tor S. Bjørheim ◽  
Truls Norby ◽  
Rune Bredesen
Keyword(s):  
Surface Layer ◽  
Space Charge ◽  
Space Charge Region ◽  
First Principles ◽  
Surface Defect ◽  
Surface Defects ◽  
Defect Chemistry ◽  
First Principles Calculations ◽  
Proton Conducting ◽  
Charged Species

First-principles calculations were utilized to elucidate the complete defect equilibria of surfaces of proton conducting BaZrO3, encompassing charged species adsorbed to the surface, defects in the surface layer as well as in the subsurface space-charge region and bulk.

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