Fabrication of high-power flip-chip blue and white LEDs operating under high current density

2004 ◽  
Vol 1 (10) ◽  
pp. 2401-2404 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
E. M. Arakcheeva ◽  
M. M. Kulagina ◽  
S. A. Gurevich ◽  
...  
Keyword(s):  
Current Density ◽  
High Power ◽  
Flip Chip ◽  
High Current Density ◽  
High Current ◽  
White Leds

scholarly journals Facile synthesis of an all-in-one graphene nanosheets@nickel electrode for high-power performance supercapacitor application

RSC Advances ◽  
2018 ◽  
Vol 8 (72) ◽  
pp. 41323-41330 ◽  
Author(s):  
Bing Huang ◽  
Zhiyuan Zhao ◽  
Jian Chen ◽  
Yuzhen Sun ◽  
Xiaowei Yang ◽  
...  
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
Graphene Nanosheets ◽  
Nickel Electrode ◽  
High Current ◽  
Power Performance ◽  
Facile Synthesis ◽  
Supercapacitor Application

GNSs@Ni electrode has a high current density, and the Cm and Cs are estimated to be 196.4 F g−1 and 36.2 mF cm−2.

Effect of h-BN/EP and BNNS/EP Composite Materials on the Reliability of Flip Chip

2021 ◽  
Author(s):  
ZK Li ◽  
Zhekun Fan ◽  
Long Dou ◽  
Zhong Jin ◽  
Zhan Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Finite Element ◽  
Current Density ◽  
Flip Chip ◽  
High Current Density ◽  
Electronic Devices ◽  
Thermal Interface Materials ◽  
High Current ◽  
Thermal Interface ◽  
Interface Materials

Abstract Under the action of electro-thermal-mechanical coupling, the failure and performance degradation of electronic devices are prone to occur, which has become a particularly important reliability problem in microelectronic packaging. The improvement of flip chip reliability by using thermal interface materials was studied. First, a three-dimensional finite element model of the flip-chip packaging system, and finite element simulation of electric-thermal-force multi-field coupling were conducted, and the Joule heating, temperature distribution, thermal stress and deformation of the flip-chip under high current density was analyzed. At the same time, the influence of thermal interface material thermal conductivity and operating current on flip chip reliability was studied. Then, the reliability experiment of the flip chip connected to the radiator under high current density was performed, and the temperature change in the flip chip under different thermal interface materials was obtained. Finally, through the combination of experiment and simulation, the influence of thermal interface materials on flip chip reliability was analyzed. It is further confirmed that the reliability and service life of electronic devices were effectively improved by using the high thermal conductivity BNNS/epoxy composite material prepared in this paper.

Failure of Flip-Chip Circuit Interconnects under High Current Density

2010 ◽  
Vol 118-120 ◽  
pp. 449-453
Author(s):  
Yu Dong Lu ◽  
Xiao Qi He ◽  
Yun Fei En ◽  
Xin Wang ◽  
Zhi Qiang Zhuang
Keyword(s):  
Current Density ◽  
Flip Chip ◽  
Chemical Potential ◽  
High Current Density ◽  
Potential Gradient ◽  
High Current ◽  
Wind Force ◽  
Chemical Potential Gradient ◽  
Solder Bumps ◽  
Electron Wind

Both Al interconnects and flip-chip solder bumps were sensitive to high current. The failure mechanism of circuits interconnects would be more complicated if the current density in circuits was exceed the critical magnitudes of electromigration in both Al interconnects and solder bumps. The failure of circuit interconnects under different magnitudes of current density was studied and the interaction of electromigration in solder bumps and Al interconnects was discussed. The circuit interconnects of flip chip show three failure phenomena under high current density: voids in Al final metal, inter-diffusion of Al and SnPb, and melting of solder bumps. The voids in Al metal show the directional diffusion of Al atoms was mainly controlled by the electron wind fore. However the inter-diffusion of Al and SnPb demonstrated the electron wind force to Sn and Pb atoms would be ignored in contrast with chemical potential gradient or intrinsic stress. The flow of Sn and Pb atoms under high current density was in opposite direction with electron wind force and uniform with chemical potential gradient.

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

2008 ◽  
Vol 38 (1) ◽  
pp. 70-77 ◽  
Author(s):  
Sang-Su Ha ◽  
Jong-Woong Kim ◽  
Jeong-Won Yoon ◽  
Sang-Ok Ha ◽  
Seung-Boo Jung
Keyword(s):  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
High Current Density ◽  
High Current

30μm Thick Cu RDL in WLCSP

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000195-000211
Author(s):  
Jacinta Amanlim ◽  
Kenny Cao ◽  
Zhang Li ◽  
K.H. Tan
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
Electrical Performance ◽  
Design Rule ◽  
High Current ◽  
Wafer Level ◽  
Cu Metallization ◽  
Additional Layer ◽  
Board Level

In situations where a device may have an interconnect pad arrangement in wafer level packaging, an additional layer of lateral connections may be employed to rearrange the connections in a manner suitable for wafer level processing. This additional layer is known as a redistribution layer, or RDL, and fabricated from a thin layer of metal with dielectrics in between. An RDL is used for higher electrical performance and complex routing to meet electrical requirements. As the importance of high power and power management in electronics products continue to rise, so also will the demands for power ICs to handle ever higher voltages without appreciably adding size and heat to the end product. Using thicker Cu metallization in an RDL is an ideal choice that accommodates high current density and lower resistance for high power applications. Assembling multiple chips in multiple layers requires more electrical connections, which in turn requires both thinner lines within the RDL and an increase in the number of RDL layers. The RDL line width of WLCSP started at over 20μm, but has already been reduced to 10~15μm in HVM. Industry players are now working in R&D to develop 2μm wide and even smaller line/space (L/S) capability to meet the requirements of today's high-end applications. In this study, we present the development of 20–30 μm thick plated Cu RDL for high power and high current density applications. Using a plated Cu process and photo-sensitive spin-on-dielectrics materials, thick Cu RDL was achieved with the AR 1:1 design rule and the reliability assessment was carried out with JEDEC reliability test conditions. A 2-layer Cu RDL (total 6-mask process with UBM) was developed and characterized for its component and board level reliability for 5×5/7×7mm, 0.35/0.4mm ball pitch WLCSP test vehicles.

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