Effect of h-BN/EP and BNNS/EP Composite Materials on the Reliability of Flip Chip

Author(s):  
ZK Li ◽  
Zhekun Fan ◽  
Long Dou ◽  
Zhong Jin ◽  
Zhan Liu ◽  
...  

Abstract Under the action of electro-thermal-mechanical coupling, the failure and performance degradation of electronic devices are prone to occur, which has become a particularly important reliability problem in microelectronic packaging. The improvement of flip chip reliability by using thermal interface materials was studied. First, a three-dimensional finite element model of the flip-chip packaging system, and finite element simulation of electric-thermal-force multi-field coupling were conducted, and the Joule heating, temperature distribution, thermal stress and deformation of the flip-chip under high current density was analyzed. At the same time, the influence of thermal interface material thermal conductivity and operating current on flip chip reliability was studied. Then, the reliability experiment of the flip chip connected to the radiator under high current density was performed, and the temperature change in the flip chip under different thermal interface materials was obtained. Finally, through the combination of experiment and simulation, the influence of thermal interface materials on flip chip reliability was analyzed. It is further confirmed that the reliability and service life of electronic devices were effectively improved by using the high thermal conductivity BNNS/epoxy composite material prepared in this paper.

Polymers ◽  
2018 ◽  
Vol 10 (11) ◽  
pp. 1201 ◽  
Author(s):  
Le Lv ◽  
Wen Dai ◽  
Aijun Li ◽  
Cheng-Te Lin

With the increasing power density of electrical and electronic devices, there has been an urgent demand for the development of thermal interface materials (TIMs) with high through-plane thermal conductivity for handling the issue of thermal management. Graphene exhibited significant potential for the development of TIMs, due to its ultra-high intrinsic thermal conductivity. In this perspective, we introduce three state-of-the-art graphene-based TIMs, including dispersed graphene/polymers, graphene framework/polymers and inorganic graphene-based monoliths. The advantages and limitations of them were discussed from an application point of view. In addition, possible strategies and future research directions in the development of high-performance graphene-based TIMs are also discussed.


Author(s):  
Shuaishuai Cheng ◽  
Xiaoyuan Duan ◽  
Liu Xiaoqing ◽  
Zhiyi Zhang ◽  
Dong An ◽  
...  

Abstract: With the development of electronic devices, it is becoming increasingly important for thermal interface materials (TIM) to efficiently and quickly remove the heat generated. However, due to the high...


Author(s):  
Vadim Gektin ◽  
Sai Ankireddi ◽  
Jim Jones ◽  
Stan Pecavar ◽  
Paul Hundt

Thermal Interface Materials (TIMs) are used as thermally conducting media to carry away the heat dissipated by an energy source (e.g. active circuitry on a silicon die). Thermal properties of these interface materials, specified on vendor datasheets, are obtained under conditions that rarely, if at all, represent real life environment. As such, they do not accurately portray the material thermal performance during a field operation. Furthermore, a thermal engineer has no a priori knowledge of how large, in addition to the bulk thermal resistance, the interface contact resistances are, and, hence, how much each influences the cooling strategy. In view of these issues, there exists a need for these materials/interfaces to be characterized experimentally through a series of controlled tests before starting on a thermal design. In this study we present one such characterization for a candidate thermal interface material used in an electronic cooling application. In a controlled test environment, package junction-to-case, Rjc, resistance measurements were obtained for various bondline thicknesses (BLTs) of an interface material over a range of die sizes. These measurements were then curve-fitted to obtain numerical models for the measured thermal resistance for a given die size. Based on the BLT and the associated thermal resistance, the bulk thermal conductivity of the TIM and the interface contact resistance were determined, using the approach described in the paper. The results of this study permit sensitivity analyses of BLT and its effect on thermal performance for future applications, and provide the ability to extrapolate the results obtained for the given die size to a different die size. The suggested methodology presents a readily adaptable approach for the characterization of TIMs and interface/contact resistances in the industry.


2000 ◽  
Author(s):  
Amit Devpura ◽  
Patrick E. Phelan ◽  
Ravi S. Prasher

Abstract An important aspect in electronic packaging is the heat dissipation. Flip-chip technology is widely being used to increase the rate of heat transfer from the chip. A method to further enhance the thermal conductivity is by the use of a thermal interface material between the device and the heat sink attached to it in the flip-chip technology. Percolation theory holds a key to understanding the behavior of thermal interface materials. Percolation, used widely in electrical engineering, is a physical phenomenon in which the highly conducting particles distributed randomly in the matrix form at least one continuous chain connecting the opposite faces of the matrix. This phenomenon was simulated using the matrix method, to study the effect of different shapes and size of the filler particles. The different shapes considered were spherical, vertical or horizontal rods, and flakes in horizontal or vertical orientation. The effect of the size of these particles was also examined. The results indicate that the composites with particles having the largest side in the direction of heat flow will always have a better conductivity than the particles oriented normal to it. Also, from the results, we can choose the best filler size in the composite if we know the filler concentration we are aiming at.


2018 ◽  
Vol 7 (4.33) ◽  
pp. 530
Author(s):  
Mazlan Mohamed ◽  
Mohd Nazri Omar ◽  
Mohamad Shaiful Ashrul Ishak ◽  
Rozyanty Rahman ◽  
Zaiazmin Y.N ◽  
...  

Epoxy mixed with others filler for thermal interface material (TIM) had been well conducted and developed. There are problem occurs when previous material were used as matrix material likes epoxy that has non-uniform thickness of thermal interface material produce, time taken for solidification and others. Thermal pad or thermal interface material using graphene as main material to overcome the existing problem and at the same time to increase thermal conductivity and thermal contact resistance. Three types of composite graphene were used for thermal interface material in this research. The sample that contain 10 wt. %, 20 wt. % and 30 wt. % of graphene was used with different contain of graphene oxide (GO).  The thermal conductivity of thermal interface material is both measured and it was found that the increase of amount of graphene used will increase the thermal conductivity of thermal interface material. The highest thermal conductivity is 12.8 W/ (mK) with 30 w. % graphene. The comparison between the present thermal interface material and other thermal interface material show that this present graphene-epoxy is an excellent thermal interface material in increasing thermal conductivity.  


Author(s):  
David Shaddock ◽  
Stanton Weaver ◽  
Ioannis Chasiotis ◽  
Binoy Shah ◽  
Dalong Zhong

The power density requirements continue to increase and the ability of thermal interface materials has not kept pace. Increasing effective thermal conductivity and reducing bondline thickness reduce thermal resistance. High thermal conductivity materials, such as solders, have been used as thermal interface materials. However, there is a limit to minimum bondline thickness in reducing resistance due to increased fatigue stress. A compliant thermal interface material is proposed that allows for thin solder bondlines using a compliant structure within the bondline to achieve thermal resistance <0.01 cm2C/W. The structure uses an array of nanosprings sandwiched between two plates of materials to match thermal expansion of their respective interface materials (ex. silicon and copper). Thin solder bondlines between these mating surfaces and high thermal conductivity of the nanospring layer results in thermal resistance of 0.01 cm2C/W. The compliance of the nanospring layer is two orders of magnitude more compliant than the solder layers so thermal stresses are carried by the nanosprings rather than the solder layers. The fabrication process and performance testing performed on the material is presented.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000093-000096
Author(s):  
Seungjun Noh ◽  
Chanyang Choe ◽  
Chuantong Chen ◽  
Shijo Nagao ◽  
Katsuaki Suganuma

Abstract This work introduces the possibility of using Ag sinter-paste as a novel high-temperature and high-current wire bonding solution. We investigated the electromigration (EM) behavior and lifetime of the sintered Ag wiring under high current density and high temperature required for the design of power electronic devices. The sinter Ag wiring fabricated on the two Cu substrates were tested under current densities of 2.7 × 104 A/cm2 at temperature of 250 °C. The microstructure evolution of sintered wiring was characterized after EM test. The resistance of sintered wiring did not change even after EM test for 300 hours, which confirms that the Ag-paste sinter wire bonding is rather stable than aluminum wire bonding under high temperature and high current density. No degradation was observed in microstructure of sintered wiring after EM test. Thus, it is expected that Ag paste sinter wire bonding is one of potential alternative interconnection technology for power electronic devices.


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