scholarly journals Facile synthesis of an all-in-one graphene nanosheets@nickel electrode for high-power performance supercapacitor application

RSC Advances ◽  
2018 ◽  
Vol 8 (72) ◽  
pp. 41323-41330 ◽  
Author(s):  
Bing Huang ◽  
Zhiyuan Zhao ◽  
Jian Chen ◽  
Yuzhen Sun ◽  
Xiaowei Yang ◽  
...  
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
Graphene Nanosheets ◽  
Nickel Electrode ◽  
High Current ◽  
Power Performance ◽  
Facile Synthesis ◽  
Supercapacitor Application

GNSs@Ni electrode has a high current density, and the Cm and Cs are estimated to be 196.4 F g−1 and 36.2 mF cm−2.

Fabrication of high-power flip-chip blue and white LEDs operating under high current density

2004 ◽  
Vol 1 (10) ◽  
pp. 2401-2404 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
E. M. Arakcheeva ◽  
M. M. Kulagina ◽  
S. A. Gurevich ◽  
...  
Keyword(s):  
Current Density ◽  
High Power ◽  
Flip Chip ◽  
High Current Density ◽  
High Current ◽  
White Leds

30μm Thick Cu RDL in WLCSP

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000195-000211
Author(s):  
Jacinta Amanlim ◽  
Kenny Cao ◽  
Zhang Li ◽  
K.H. Tan
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
Electrical Performance ◽  
Design Rule ◽  
High Current ◽  
Wafer Level ◽  
Cu Metallization ◽  
Additional Layer ◽  
Board Level

In situations where a device may have an interconnect pad arrangement in wafer level packaging, an additional layer of lateral connections may be employed to rearrange the connections in a manner suitable for wafer level processing. This additional layer is known as a redistribution layer, or RDL, and fabricated from a thin layer of metal with dielectrics in between. An RDL is used for higher electrical performance and complex routing to meet electrical requirements. As the importance of high power and power management in electronics products continue to rise, so also will the demands for power ICs to handle ever higher voltages without appreciably adding size and heat to the end product. Using thicker Cu metallization in an RDL is an ideal choice that accommodates high current density and lower resistance for high power applications. Assembling multiple chips in multiple layers requires more electrical connections, which in turn requires both thinner lines within the RDL and an increase in the number of RDL layers. The RDL line width of WLCSP started at over 20μm, but has already been reduced to 10~15μm in HVM. Industry players are now working in R&D to develop 2μm wide and even smaller line/space (L/S) capability to meet the requirements of today's high-end applications. In this study, we present the development of 20–30 μm thick plated Cu RDL for high power and high current density applications. Using a plated Cu process and photo-sensitive spin-on-dielectrics materials, thick Cu RDL was achieved with the AR 1:1 design rule and the reliability assessment was carried out with JEDEC reliability test conditions. A 2-layer Cu RDL (total 6-mask process with UBM) was developed and characterized for its component and board level reliability for 5×5/7×7mm, 0.35/0.4mm ball pitch WLCSP test vehicles.

scholarly journals High Current Density, Long Life Cathodes for High Power RF Sources

2014 ◽  
Author(s):  
Robert Lawrence Ives ◽  
◽  
George Collins ◽  
Lou Falce ◽  
Steve Schwartzkopf ◽  
...  
Keyword(s):  
Current Density ◽  
High Power ◽  
High Current Density ◽  
High Current ◽  
Long Life
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