Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization

2004 ◽  
Vol 1 (6) ◽  
pp. 1397-1402 ◽  
Author(s):  
A. Vinattieri ◽  
M. Colocci ◽  
F. Rossi ◽  
C. Ferrari ◽  
N. Armani ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Localization ◽  
Field Versus ◽  
Piezoelectric Field ◽  
Recombination Dynamics

Recombination Dynamics in GaN/AlGaN Quantum Wells: The Role of Built-in Fields

2001 ◽  
Vol 188 (2) ◽  
pp. 851-855 ◽  
Author(s):  
D. Alderighi ◽  
A. Vinattieri ◽  
J. Kudrna ◽  
M. Colocci ◽  
A. Reale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Recombination Dynamics

A Role of the Built-in Piezoelectric Field in InGaN/AlGaN/GaN Multiple Quantum Wells in the Electroferlectance Experiments

2007 ◽  
Vol 1040 ◽  
Author(s):  
Pavel Bokov ◽  
Lev Avakyants ◽  
Mansur Badgutdinov ◽  
Anatoly Chervyakov ◽  
Stanislav Shirokov ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Reverse Bias ◽  
Flip Chip ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Reverse Bias Voltage ◽  
Light Emitting ◽  
Piezoelectric Field

AbstractThe influence of built in piezoelectric field in the light-emitting diodes based on InGaN/AlGaN/GaN heterostructures on the electroreflectance spectra have been studied. The structures were grown by MOCVD technology and «flip-chip» mounted. Light was emitted or reflected through sapphire substrate. The built in electric field in the structure was modulated by pulses of reverse bias from -6 to +1 V applied to the contacts of diode. Observed blue shift of spectral line from InGaN/GaN multiply quantum wells region with the increasing reverse bias voltage has been explained as the result of lowering of the electric field in the quantum well.

Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells

2001 ◽  
Vol 78 (5) ◽  
pp. 640-642 ◽  
Author(s):  
G. Vaschenko ◽  
D. Patel ◽  
C. S. Menoni ◽  
S. Keller ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dominant Role ◽  
Pressure Behavior ◽  
Piezoelectric Field

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field
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