Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates

1991 ◽  
Vol 226 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Polycrystalline Diamond ◽  
Selective Growth ◽  
Ultrasonic Agitation ◽  
Sapphire Substrates ◽  
Diamond Thin Films ◽  
Scanning Electron ◽  
Novel Processes

AbstractPolycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to selectively damage the polished substrates by ultrasonic agitation. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

1992 ◽  
Vol 7 (5) ◽  
pp. 1144-1151 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Silicon Dioxide ◽  
Polycrystalline Diamond ◽  
Typical Size ◽  
Ultrasonic Agitation ◽  
Sapphire Substrates ◽  
Diamond Thin Films ◽  
Silicon Silicon ◽  
Scanning Electron

Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Imaging magnetic microstructure with SEMPA

1993 ◽  
Vol 51 ◽  
pp. 1032-1033
Author(s):  
M. H. Kelley ◽  
J. Unguris ◽  
R. J. Celotta ◽  
D. T. Pierce
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sandwich Structure ◽  
Magnetic Coupling ◽  
Polarization Analysis ◽  
Secondary Electrons ◽  
Magnetic Microstructure ◽  
Escape Depth ◽  
Scanning Electron

By measuring the spin polarization of secondary electrons generated in a scanning electron microscope, scanning electron microscopy with polarization analysis (SEMPA) can directly image the magnitude and direction of a material’s magnetization. Because the escape depth of the secondaries is only on the order of 1 nm, SEMPA is especially well-suited for investigating the magnetization of ultra-thin films and surfaces. We have exploited this feature of SEMPA to study the magnetic microstrcture and magnetic coupling in ferromagnetic multilayers where the layers may only be a few atomic layers thick. For example, we have measured the magnetic coupling in Fe/Cr/Fe(100) and Fe/Ag/Fe(100) trilayers and have found that the coupling oscillates between ferromagnetic and antiferromagnetic as a function of the Cr or Ag spacer thickness.The SEMPA apparatus has been described in detail elsewhere. The sample consisted of a magnetic sandwich structure with a wedge-shaped interlayer as shown in Fig. 1.

Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

2004 ◽  
Author(s):  
Debbie G. Jones ◽  
Albert P. Pisano
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Saturation Magnetization ◽  
Silicon Wafer ◽  
Fabrication Process ◽  
Sem Images ◽  
Deep Reactive Ion Etching ◽  
Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

Synthesis and Film Investigation of Titania

2013 ◽  
Vol 832 ◽  
pp. 128-131
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Titanium Butoxide ◽  
Before And After ◽  
Scanning Electron ◽  
Spin Coater

Titania or titanium dioxide (TiO2) thin film has been synthesized via sol-gel method with monoethanolamine (MEA) as a catalyst. The mixing of titanium butoxide as a precursor, ethanol as a solvent and MEA were stirred using magnetic stirrer under ambient temperature [. The TiO2solution prepared then was deposited on SiO2substrates using spin-coater and the coated films were annealed at 600°C. Finally, both before and after annealed TiO2thin films were characterized using Field Emission Scanning Electron Microscopy (FESEM). The obtained results show the different TiO2particles formation before and after annealed.

Analyse of Indium Loss in Preparation of CuInSe2 Flims for Solar Cells

2011 ◽  
Vol 183-185 ◽  
pp. 1837-1841
Author(s):  
Lei Sha ◽  
Yan Lai Wang ◽  
Shi Liang Ban
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Stainless Steel ◽  
Solar Cells ◽  
Surface Morphology ◽  
Energy Dispersive Spectroscopy ◽  
Titanium Substrates ◽  
Selenization Process ◽  
Scanning Electron

CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and titanium substrates by electrodeposition. The films were characterized by XRD, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The respective influences of composition, phases and surface morphology of Cu-In precursors on indium loss were investigated. The results indicate that the indium loss occurs in selenization process because of volatile In2Se arising. The indium loss is less in selenization process of Cu-In precursors contained CuIn, Cu2In and In phases.

Formation and Characterization of the Quasicrystal Films

2007 ◽  
Vol 546-549 ◽  
pp. 1699-1702
Author(s):  
Xi Ying Zhou ◽  
Liang He ◽  
Yan Hui Liu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Electric Current ◽  
Wear Behavior ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

1990 ◽  
Vol 04 (05) ◽  
pp. 369-373 ◽  
Author(s):  
Y. Z. ZHANG ◽  
L. LI ◽  
Y. Y. ZHAO ◽  
B. R. ZHAO ◽  
Y. G. WANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Low Loss ◽  
X Ray ◽  
Ybco Thin Films ◽  
Zero Resistance ◽  
Scanning Electron

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

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