Fermi-level pinning and effect of deposition bath pH on the flat-band potential of electrodeposited n-Cu2O in an aqueous electrolyte

2016 ◽  
Vol 253 (10) ◽  
pp. 1965-1969 ◽  
Author(s):  
F. S. B. Kafi ◽  
K. M. D. C. Jayathileka ◽  
R. P. Wijesundera ◽  
W. Siripala
Keyword(s):  
Fermi Level ◽  
Aqueous Electrolyte ◽  
Flat Band ◽  
Flat Band Potential ◽  
Fermi Level Pinning

Fermi level pinning or semiconductor electrodes in aqueous and non aqueous electrolytes: influence of the modification of the electrode surface

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo
Keyword(s):  
Fermi Level ◽  
Acidic Medium ◽  
Open Circuit ◽  
Flat Band ◽  
Flat Band Potential ◽  
Fermi Level Pinning ◽  
Material Surfaces ◽  
Electrolyte Interface ◽  
Semiconductor Electrodes ◽  
Minority Carriers

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.

Notizen: Fermi-Niveau und Flachbandpotential von Molekülkristallen aromatischer Kohlenwasserstoffe

1967 ◽  
Vol 22 (5) ◽  
pp. 843-844 ◽  
Author(s):  
Frank Lohmann
Keyword(s):  
Aromatic Hydrocarbon ◽  
Fermi Level ◽  
Electron Affinity ◽  
Ionization Energy ◽  
Flat Band ◽  
Flat Band Potential ◽  
First Approximation ◽  
Hydrocarbon Molecules

The sum of ionization energy and electron affinity for aromatic hydrocarbon molecules is constant and therefore the Fermi level for intrinsic aromatic hydrocarbon crystals is in first approximation independent of the nature of the hydrocarbon. This relationship leads in turn to a constant value for the flat band potential of aromatic hydrocarbon crystals in contact with an electrolyte. An estimate of this value is given.

Photoelectrochemical cells with n-CdTe

1982 ◽  
Vol 35 (10) ◽  
pp. 1949 ◽  
Author(s):  
AE Rakhshani ◽  
LE Lyons
Keyword(s):  
Fermi Level ◽  
Empirical Relationship ◽  
Open Circuit ◽  
Photoelectrochemical Cells ◽  
Flat Band ◽  
High State ◽  
Photovoltaic Properties ◽  
Minority Carrier Diffusion Length ◽  
Fermi Level Pinning ◽  
Redox Couples

The opto-electrical behaviour of single crystal n-type CdTe in aqueous solutions containing several redox couples Sn2+,4+, Fe2+3+ and Fe(CN)63-,4-in the dark and under irradiation is described. The minority carrier diffusion length was 0.13 μm from a combination of results on photocurrents and capacitance. The dopant concentration was 1.4 × 1017 cm-3 from Mott-Schottky plots. In the cdTe-Sn2+,4+ system the photovoltaic properties of the junction depended on the state of charge injection into the interface region. We distinguished between a 'high state' and a 'low state' where in the 'high state' both the open circuit photovoltage and the fill factor were approximately twice as large as in the 'low state'. Possibilities for a difference in the value of the built-in potential obtained from the photocurrent method and from a Mott-Schottky plot are described. The built-in potential (or the flat-band potential) was independent of the redox potential, an effect which is analogous to Fermi-level pinning. The empirical relationship between barrier height and band gap in a Fermi-level pinned junction held for our system.

On the Flat-Band Potential of n-Type Cadmium Telluride in Alkaline Selenide, Polyselenide Electrolytes

1987 ◽  
Vol 40 (4) ◽  
pp. 723 ◽  
Author(s):  
LE Lyons ◽  
TL Young
Keyword(s):  
Ion Concentration ◽  
Flat Band ◽  
Semiconductor Surface ◽  
Flat Band Potential ◽  
Ideal Model ◽  
Fermi Level Pinning ◽  
Maximum Value ◽  
Monolayer Adsorption ◽  
Observed Behaviour ◽  
The Ideal

The flat-band potential Efb of n-CdTe in alkaline K2Se solution was determined by the Mott-Schottky technique as a function of properties of the crystal and electrolyte. The experimental value, c.- 2.0 V v. s.c.e., is more negative than the value calculated by assuming the absence of localized surface charge, -0.35 V v. s.c.e. For a given electrolyte, Epb depended on the crystal orientation, and became more negative in the order (111), (110), (111). These results are consistent with specific adsorption of anionic selenide species on surface cadmium atoms. For a freshly prepared CdTe electrode, Efb depended on the selenide ion concentration in a Nernstian manner, consistent with sub-monolayer adsorption of HSe-. In contrast, when electrodes had been exposed to selenide electrolytes for several days, Efb was less dependent on the selenide ion concentration, in some cases being constant over four orders of magnitude of [Se2-]. Such results were consistent either with saturation of the surface with adsorbed ions, or with pinning. As the electrolyte was oxidized, Ub increased linearly with Eredox, reached a maximum value at -0.81 V v. s.c.e., and then decreased, so that neither the ideal model nor the Fermi level pinning model applied. Models which assumed adsorption only of HSe- were inconsistent with the observed behaviour, but the results were explained quantitatively by a model which assumed the competitive adsorption of HSe- and Se on the semiconductor surface. Such a model was consistent also with the independence of Efb and the total selenide concentration observed in some experiments. .The largest built-in potential observed was 1.23 V. An improved method of preparing CdTe electrodes is described.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning
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