The role of band alignment in p-type conductivity of Na-doped ZnMgO: Polar versus non-polar

2014 ◽  
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pp. 112106 ◽  
Author(s):  
H. H. Zhang ◽  
X. H. Pan ◽  
Y. Li ◽  
Z. Z. Ye ◽  
B. Lu ◽  
...  
2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga

2015 ◽  
Vol 17 (7) ◽  
pp. 5485-5489 ◽  
Author(s):  
M. N. Amini ◽  
R. Saniz ◽  
D. Lamoen ◽  
B. Partoens

With the help of first-principles calculations, we investigate the VZn–NO–H acceptor complex in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn–NO, a complex known to exhibit p-type behavior. However, this additional H atom also occupies the hole level of VZn–NO making the VZn–NO–H complex a deep acceptor.


2013 ◽  
Vol 25 (47) ◽  
pp. 475801 ◽  
Author(s):  
J Berashevich ◽  
J A Rowlands ◽  
A Reznik
Keyword(s):  

2012 ◽  
Vol 108 (21) ◽  
Author(s):  
Lei Liu ◽  
Jilian Xu ◽  
Dandan Wang ◽  
Mingming Jiang ◽  
Shuangpeng Wang ◽  
...  
Keyword(s):  

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1758-P
Author(s):  
HUGO MARTIN ◽  
SÉBASTIEN BULLICH ◽  
FABIEN DUCROCQ ◽  
MARION GRALAND ◽  
CLARA OLIVRY ◽  
...  

2021 ◽  
Vol 23 (12) ◽  
pp. 7418-7425
Author(s):  
Magdalena Laurien ◽  
Himanshu Saini ◽  
Oleg Rubel

We calculate the band alignment of the newly predicted phosphorene-like puckered monolayers with G0W0 according to the electron affinity rule and examine trends in the electronic structure. Our results give guidance for heterojunction design.


2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  

2021 ◽  
Vol 118 (11) ◽  
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Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  

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