Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al2O3nanowires with rectangular cross-section

2010 ◽  
Vol 247 (1) ◽  
pp. 134-139 ◽  
Author(s):  
Dmitry Pozdnyakov
Keyword(s):  
Surface Roughness ◽  
Cross Section ◽  
Rectangular Cross Section ◽  
Low Field ◽  
Surface Roughness Scattering ◽  
Field Mobility ◽  
Undoped Gaas ◽  
Low Field Mobility

The influence of nonelectronegative molecules on the mobility of excess electrons in liquefied rare gases and tetramethylsilane

1977 ◽  
Vol 55 (11) ◽  
pp. 1885-1889 ◽  
Author(s):  
Ulrich Sowada ◽  
Werner F. Schmidt ◽  
George Bakale
Keyword(s):  
Cross Section ◽  
Drift Velocity ◽  
Collision Cross Section ◽  
Liquid Argon ◽  
Solute Concentration ◽  
Low Field ◽  
Field Mobility ◽  
Excess Electrons ◽  
Low Field Mobility ◽  
Field Strengths

Addition of nonelectronegative molecules (n-alkanes, alkenes, CO, CO2) to liquid argon, krypton, and xenon influences the drift velocity of excess electrons in an electric field. At high field strengths (104–105 V cm−1), where the electrons have mean energies exceeding kT, inelastic collisions with solute molecules lead to an increase of the drift velocity above the value of the pure solvent. Analysis of this effect yields the energy dependent product of collision cross section and mean fractional energy loss per collision.At low field strengths a decrease of the low field mobility with increasing solute concentration is observed from which the cross section for momentum transfer could be deduced. The influence of solutes on the low field mobility was also found in tetramethylsilane.

scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
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