Step-Scanning WSR Section Topography for Indirect (Point Defect) Characterization of Dislocation-Free Si Wafers

1990 ◽  
Vol 122 (1) ◽  
pp. 171-186 ◽  
Author(s):  
J. D. Stephenson
Keyword(s):  
Point Defect ◽  
Defect Characterization ◽  
Section Topography

Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy

1989 ◽  
Vol 161 ◽  
Author(s):  
W.M. Duncan ◽  
R.J. Koestner ◽  
J.H. Tregilgas ◽  
H.-Y. Liu ◽  
M.-C. Chen
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Point Defect ◽  
Impurity Concentration ◽  
Room Temperature ◽  
Precise Determination ◽  
Defect Characterization ◽  
Helium Temperature ◽  
Composition Determination

ABSTRACTResults from high resolution helium temperature photoluminescence (PL) spectroscopy have been correlated to precision lattice constant and transport measurements and to theoretical band gap versus composition behavior. It is found that low temperature PL spectra provide precise determination (+/- 0.02%) of ZnTe mole fraction as well as carrier type, relative impurity concentration and point defect properties of these substrates. In addition helium and room temperature PL results are correlated to determine the accuracy of room temperature measurements for composition determination.

Point defect characterization of GaN and ZnO

1999 ◽  
Vol 66 (1-3) ◽  
pp. 30-32 ◽  
Author(s):  
D.C Look ◽  
D.C Reynolds ◽  
Z.-Q Fang ◽  
J.W Hemsky ◽  
J.R Sizelove ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Characterization

(Invited) Point Defect Characterization of Group-III Nitrides by Using Monoenergetic Positron Beams

2014 ◽  
Vol 61 (5) ◽  
pp. 19-30 ◽  
Author(s):  
A. Uedono ◽  
S. Ishibashi ◽  
N. Oshima ◽  
R. Suzuki ◽  
M. Sumiya
Keyword(s):  
Point Defect ◽  
Group Iii Nitrides ◽  
Defect Characterization ◽  
Group Iii ◽  
Positron Beams

Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques

1998 ◽  
Vol 510 ◽  
Author(s):  
G. Tessaro ◽  
P. Mascher
Keyword(s):  
Point Defect ◽  
Positron Annihilation ◽  
Point Defects ◽  
Compound Semiconductors ◽  
Defect Characterization ◽  
Defect Complexes ◽  
Defect Profile ◽  
Profile Changes ◽  
Binary Compounds

AbstractA study of point defects in II-VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid 1016 cm−3. CdTe samples contain neutral monovacancy sized defect complexes in the high 1016 cm−3 range. When a small fraction of Zn or Se is alloyed into CdTe the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration.

Defect characterization of CdTe thin films using a slow positron beam

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Cdte Thin Films

Subwavelength Defect Characterization Using Guided Wave Scattering Matrix

2013 ◽  
Vol 330 ◽  
pp. 504-509
Author(s):  
Yang Zheng ◽  
Jin Jie Zhou ◽  
Hui Zheng
Keyword(s):  
Wave Scattering ◽  
Scattering Matrix ◽  
Guided Wave ◽  
Defect Characterization ◽  
Challenging Problem ◽  
Recognition Method ◽  
Quantitative Characterization ◽  
S Matrix ◽  
Imaging Algorithms

Although many imaging algorithms such as ellipse and hyperbola algorithm can roughly locate defects in large plate-like structures with sparse guided wave arrays, quantitative characterization of them is still a challenging problem, especially for those small defects known as subwavelength defects. Scattering signals of defects contain abundant information so that can be used to evaluate defects. A defects recognition method using the S-matrix (scattering matrix) was presented. S-matrices of hole and crack with S0 mode incident were experimentally measured. The results show that defects can be recognized from the morphology of 2D S-matrix chart. This method has great potential to achieve more specific parameters of small defects with sparse guided wave arrays.

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