(Invited) Point Defect Characterization of Group-III Nitrides by Using Monoenergetic Positron Beams

2014 ◽  
Vol 61 (5) ◽  
pp. 19-30 ◽  
Author(s):  
A. Uedono ◽  
S. Ishibashi ◽  
N. Oshima ◽  
R. Suzuki ◽  
M. Sumiya
Keyword(s):  
Point Defect ◽  
Group Iii Nitrides ◽  
Defect Characterization ◽  
Group Iii ◽  
Positron Beams

Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy

1989 ◽  
Vol 161 ◽  
Author(s):  
W.M. Duncan ◽  
R.J. Koestner ◽  
J.H. Tregilgas ◽  
H.-Y. Liu ◽  
M.-C. Chen
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Point Defect ◽  
Impurity Concentration ◽  
Room Temperature ◽  
Precise Determination ◽  
Defect Characterization ◽  
Helium Temperature ◽  
Composition Determination

ABSTRACTResults from high resolution helium temperature photoluminescence (PL) spectroscopy have been correlated to precision lattice constant and transport measurements and to theoretical band gap versus composition behavior. It is found that low temperature PL spectra provide precise determination (+/- 0.02%) of ZnTe mole fraction as well as carrier type, relative impurity concentration and point defect properties of these substrates. In addition helium and room temperature PL results are correlated to determine the accuracy of room temperature measurements for composition determination.

Point defect characterization of GaN and ZnO

1999 ◽  
Vol 66 (1-3) ◽  
pp. 30-32 ◽  
Author(s):  
D.C Look ◽  
D.C Reynolds ◽  
Z.-Q Fang ◽  
J.W Hemsky ◽  
J.R Sizelove ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Characterization

Ab initio molecular orbital characterization of sources for photo-assisted radical beam epitaxy of group-III nitrides

2003 ◽  
Vol 27 (1-2) ◽  
pp. 50-57 ◽  
Author(s):  
Keiji Hayashi ◽  
Takuo Kanayama ◽  
Hideki Kojima ◽  
Toyohiro Shimizu
Keyword(s):  
Ab Initio ◽  
Molecular Orbital ◽  
Group Iii Nitrides ◽  
Group Iii

Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties

2003 ◽  
Vol 0 (6) ◽  
pp. 1795-1815 ◽  
Author(s):  
J. Christen ◽  
T. Riemann ◽  
F. Bertram ◽  
D. Rudloff ◽  
P. Fischer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Group Iii Nitrides ◽  
Electronic And Optical Properties ◽  
Group Iii

EELS Characterization of Electronic Structure in Group III - Nitrides Compared With Synchrotron Ellipsometry Results

1999 ◽  
Vol 5 (S2) ◽  
pp. 692-693
Author(s):  
G. Brockt ◽  
H. Lakner
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Group Iii Nitrides ◽  
Wide Bandgap ◽  
Loss Peak ◽  
Low Loss ◽  
Group Iii ◽  
Specimen Material ◽  
Wide Bandgap Materials

EELS in the low loss region of the spectra (< 50eV) provides information on excitations of outer shell electrons and thus the electronic structure of a specimen material which determines its optical properties. In this work dedicated EELS methods for the experimental acquisition and analysis of spectra are described which give improved information about the electronic structure near the bandgap region at a spatial resolution in the range of nanometers. For this purpose we made use of a cold field emission STEM equipped with a dedicated EELS system. This device provides a subnanometer electron probe and offers an energy resolution of 0.35 eV. Application of suitable deconvolution routines for removal of the zero loss peak extracts information on the closest bandgap region while Kramers-Kronig transformation deduces the dielectric properties from the measured energy loss function. These methods have been applied to characterize the optical properties of wide-bandgap materials for the case of group Ill-nitride compounds which are currently the most promising material for applications on optoelectronic devices working in the blue and ultraviolet spectral range.

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