Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques

1998 ◽  
Vol 510 ◽  
Author(s):  
G. Tessaro ◽  
P. Mascher
Keyword(s):  
Point Defect ◽  
Positron Annihilation ◽  
Point Defects ◽  
Compound Semiconductors ◽  
Defect Characterization ◽  
Defect Complexes ◽  
Defect Profile ◽  
Profile Changes ◽  
Binary Compounds

AbstractA study of point defects in II-VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid 1016 cm−3. CdTe samples contain neutral monovacancy sized defect complexes in the high 1016 cm−3 range. When a small fraction of Zn or Se is alloyed into CdTe the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration.

Point Defect Thermodynamics of Compound Semiconductors and their Alloys

1982 ◽  
Vol 14 ◽  
Author(s):  
F. A. Kröger
Keyword(s):  
Physical Properties ◽  
Point Defect ◽  
Phase Diagrams ◽  
Point Defects ◽  
Compound Semiconductors ◽  
Defect Chemistry ◽  
Ternary Compounds ◽  
Partial Pressures ◽  
Binary Compounds

ABSTRACTThe physical properties of crystalline solids depend on the presence of point defects. The concentrations of these defects in turn depend on the conditions of preparation and the presence of dopants. Quantitative relations between these conditions (partial pressures of components, concentrations of dopants, temperature) and the defect concentrations is arrived at on the basis of defect chemistry. Examples of pure and doped binary compounds, alloys of binary compounds, and ternary compounds, are given. Whereas binary compounds have one composition variable, the alloy systems and the ternary compounds have two. The role of phase diagrams in preparing systems of required composition and properties is stressed.

scholarly journals Characterization of point defects in CdTe by positron annihilation spectroscopy

2016 ◽  
Vol 108 (24) ◽  
pp. 242102 ◽  
Author(s):  
M. R. M. Elsharkawy ◽  
G. S. Kanda ◽  
E. E. Abdel-Hady ◽  
D. J. Keeble
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Positron Annihilation Spectroscopy

Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy

1989 ◽  
Vol 161 ◽  
Author(s):  
W.M. Duncan ◽  
R.J. Koestner ◽  
J.H. Tregilgas ◽  
H.-Y. Liu ◽  
M.-C. Chen
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Point Defect ◽  
Impurity Concentration ◽  
Room Temperature ◽  
Precise Determination ◽  
Defect Characterization ◽  
Helium Temperature ◽  
Composition Determination

ABSTRACTResults from high resolution helium temperature photoluminescence (PL) spectroscopy have been correlated to precision lattice constant and transport measurements and to theoretical band gap versus composition behavior. It is found that low temperature PL spectra provide precise determination (+/- 0.02%) of ZnTe mole fraction as well as carrier type, relative impurity concentration and point defect properties of these substrates. In addition helium and room temperature PL results are correlated to determine the accuracy of room temperature measurements for composition determination.

Hardening by Point Defects and Solutes in B2 Intermetallics

2002 ◽  
Vol 753 ◽  
Author(s):  
L. M. Pike ◽  
Y. A. Chang ◽  
C. T. Liu ◽  
I. M. Anderson
Keyword(s):  
Solid Solution ◽  
Point Defect ◽  
Point Defects ◽  
Solid Solution Hardening ◽  
Quenching Temperature ◽  
Solid Solution Softening ◽  
Ordered Intermetallic ◽  
Multiple Defect ◽  
Binary Compounds ◽  
Hardness Values

ABSTRACTThis paper provides a review of recent progress on point defect and solute hardening in binary and ternary B2 intermetallics. As is the case for disordered metallic solutions, the presence of point defects and solute atoms in ordered intermetallic compounds results in solid solution hardening (SSH). However, factors unique to ordered systems are often responsible for unusual hardening effects. Binary compounds with identical crystal structures can exhibit significantly different hardness behavior. Ternary solute additions to ordered compounds can give rise to apparent solid solution softening as well as unexpectedly rapid hardening. These effects arise from the interaction of multiple defect types as well as the presence of multiple sublattice sites available for solute occupation. Therefore, before the SSH behavior of ordered intermetallics can be properly studied, it is necessary to develop an understanding of the types and quantities of the point defects which are present. Three recent studies by the authors are reviewed. Much of the work was done on NiAl and FeAl in binary form as well as with ternary additions. Defect concentrations over wide ranges in alloy composition and quenching temperature were determined using the ALCHEMI (atom location by channeling enhanced microanalysis) technique combined with vacancy measurements. Hardness values were also measured. It was found that most of the observed SSH effects could be rationalized on the basis of the measured point defect concentrations.

Point defect characterization of GaN and ZnO

1999 ◽  
Vol 66 (1-3) ◽  
pp. 30-32 ◽  
Author(s):  
D.C Look ◽  
D.C Reynolds ◽  
Z.-Q Fang ◽  
J.W Hemsky ◽  
J.R Sizelove ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Characterization

scholarly journals Structural characterization of off-stoichiometric kesterite-type Cu2ZnGeSe4 compound semiconductors: from cation distribution to intrinsic point defect density

CrystEngComm ◽  
2018 ◽  
Vol 20 (11) ◽  
pp. 1491-1498 ◽  
Author(s):  
R. Gunder ◽  
J. A. Márquez-Prieto ◽  
G. Gurieva ◽  
T. Unold ◽  
S. Schorr
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Point Defect ◽  
Structural Characterization ◽  
Cation Distribution ◽  
Defect Density ◽  
Compound Semiconductors ◽  
Thin Film Solar Cells ◽  
Intrinsic Point Defect

The substitution of Ge4+ for Sn4+ in Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-type absorber layers for thin film solar cells has been proven to enhance the opto-electronic properties of the material.

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