Schottky Barrier Height Modification on n-Type Silicon by Wet Chemical Etching

1989 ◽  
Vol 111 (1) ◽  
pp. K31-K35 ◽  
Author(s):  
G. A. Adegboyega
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Barrier Height ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

Simulation of hydrogen penetration into p-type silicon under wet chemical etching

2002 ◽  
Vol 36 (3) ◽  
pp. 282-285 ◽  
Author(s):  
O. V. Feklisova ◽  
E. B. Yakimov ◽  
N. A. Yarykin
Keyword(s):  
Chemical Etching ◽  
Type Silicon ◽  
Hydrogen Penetration ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type

The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon

1981 ◽  
Vol 38 (11) ◽  
pp. 865-866 ◽  
Author(s):  
H. Norde ◽  
J. de Sousa Pires ◽  
F. d’Heurle ◽  
F. Pesavento ◽  
S. Petersson ◽  
...  
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals ◽  
Type Silicon
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