Modification of the theory of threshold voltage shift of MOS transistors by ion implantation

1975 ◽  
Vol 30 (1) ◽  
pp. 147-153 ◽  
Author(s):  
H. Runge
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Mos Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift

A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface

2007 ◽  
Vol 555 ◽  
pp. 147-152 ◽  
Author(s):  
M. Odalović ◽  
D. Petković
Keyword(s):  
Silicon Dioxide ◽  
Threshold Voltage ◽  
Gamma Ray ◽  
Monte Carlo Model ◽  
Mos Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Silicon Dioxide Films ◽  
Gamma Ray Irradiation ◽  
Silicon Interface

The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.

scholarly journals A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors

2012 ◽  
Vol 27 (1) ◽  
pp. 33-39 ◽  
Author(s):  
Tijana Kevkic ◽  
Mihajlo Odalovic ◽  
Dragan Petkovic
Keyword(s):  
Stochastic Model ◽  
Silicon Dioxide ◽  
Charge Distribution ◽  
Threshold Voltage ◽  
Gamma Ray ◽  
Mos Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Silicon Dioxide Films ◽  
Induced Charge

A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon dioxide films of MOS transistors is presented in this paper. It is assumed that both radiation induced charge generation and trapped charge recombination are stochastic processes. For estimating gamma-ray induced charges spatially distributed in silicon dioxide films, a procedure similar to the Monte Carlo method was used. The proposed model implemented in the programming language MATHEMATICA enables us, for the first time, to show the gamma-ray induced charge distribution as a function of gamma-ray doses. Using the developed model, we have also calculated the corresponding threshold voltage shifts of MOS transistors. These results were compared with the experimentally determined threshold voltage shift of MOS transistors with different voltages applied during irradiation vs. gamma radiation doses. Satisfactory agreements were obtained.

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