Equilibrium distribution of the uncompensated mobile charge in the dielectric layer of a MOS structure

1974 ◽  
Vol 24 (1) ◽  
pp. 359-366 ◽  
Author(s):  
W. Marciniak ◽  
H. M. Przewłsocki
Keyword(s):  
Dielectric Layer ◽  
Equilibrium Distribution ◽  
Mobile Charge ◽  
Mos Structure

The effect of a mobile charge in silicon dioxide on the surface-states density of an MOS structure

1976 ◽  
Vol 19 (3) ◽  
pp. 378-379
Author(s):  
V. N. Vertoprakhov ◽  
B. M. Kuchumov ◽  
M. F. Reznichenko ◽  
E. G. Sal'man
Keyword(s):  
Silicon Dioxide ◽  
Surface States ◽  
Mobile Charge ◽  
Mos Structure

Determination of the efficiency of electron capture center parameters in the MOS structure dielectric layer

1982 ◽  
Vol 25 (7) ◽  
pp. 618-620
Author(s):  
N. I. Gavrilin ◽  
G. N. Demidova ◽  
�. N. Zhuravlev
Keyword(s):  
Electron Capture ◽  
Dielectric Layer ◽  
Mos Structure ◽  
Capture Center

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Tuning the Localized Surface Plasmon Resonance of Al-Al2O3 Nanosphere Towards NIR Region by Gold Coating

2020 ◽  
Vol 12 ◽  
Author(s):  
Jyoti Katyal ◽  
Shivani Gautam
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Dielectric Layer ◽  
Electric Field Distribution ◽  
Active Material ◽  
Visible Region ◽  
Field Enhancement ◽  
Localized Surface Plasmon ◽  
Sers Substrate ◽  
Al Nanoparticles

Background: A relatively narrow LSPR peak and a strong inter band transition ranging around 800 nm makes Al strongly plasmonic active material. Usually, Al nanoparticles are preferred for UV-plasmonic as the SPR of small size Al nanoparticles locates in deep UV-UV region of the optical spectrum. This paper focused on tuning the LSPR of Al nanostructure towards infrared region by coating Au layer. The proposed structure has Au as outer layer which prevent the further oxidation of Al nanostructure. Methods: The Finite Difference Time Domain (FDTD) and Plasmon Hybridization Theory has been used to evaluated the LSPR and field enhancement of single and dimer Al-Al2O3-Au MDM nanostructure. Results: It is observed that the resonance mode show dependence on the thickness of Al2O3 layer and also on the composition of nanostructure. The Au layered MDM nanostructure shows two peak of equal intensities simultaneously in UV and visible region tuned to NIR region. The extinction spectra and electric field distribution profiles of dimer nanoparticles are compared with monomer to reveal the extent of coupling. The dimer configuration shows higher field enhancement ~107 at 1049 nm. By optimizing the thickness of dielectric layer the MDM nanostructure can be used over UV-visible-NIR region. Conclusion: The LSPR peak shows dependence on the thickness of dielectric layer and also on the composition of nanostructure. It has been observed that optimization of size and thickness of dielectric layer can provide two peaks of equal intensities in UV and Visible region which is advantageous for many applications. The electric field distribution profiles of dimer MDM nanostructure enhanced the field by ~107 in visible and NIR region shows its potential towards SERS substrate. The results of this study will provide valuable information for the optimization of LSPR of Al-Al2O3-Au MDM nanostructure to have high field enhancement.

The effect of systematic errors of the equilibrium distribution concentrations on the number of stages of countercurrent extraction with various consumption of extractant

1989 ◽  
Vol 54 (4) ◽  
pp. 981-989
Author(s):  
Ján Dojčanský ◽  
Soňa Bafrncová ◽  
Július Surový
Keyword(s):  
Equilibrium Distribution ◽  
Systematic Errors ◽  
Mutual Solubility ◽  
Operating Conditions ◽  
Liquid Equilibrium ◽  
Countercurrent Extraction ◽  
Absolute Deviation ◽  
Line Slope ◽  
Tie Line ◽  
Calculated Number

On using five hypothetical systems differing in the extent of mutual solubility of components, tie-line slope, and type of binodal curve, the effect is evaluated of systematic errors in the form of absolute deviation in the liquid-liquid equilibrium distribution concentrations on the accuracy of calculated number of theoretical stages of isothermal countercurrent extraction under various operating conditions.

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