The effect of a mobile charge in silicon dioxide on the surface-states density of an MOS structure

1976 ◽  
Vol 19 (3) ◽  
pp. 378-379
Author(s):  
V. N. Vertoprakhov ◽  
B. M. Kuchumov ◽  
M. F. Reznichenko ◽  
E. G. Sal'man
Keyword(s):  
Silicon Dioxide ◽  
Surface States ◽  
Mobile Charge ◽  
Mos Structure

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam ◽  
Surface States ◽  
Electrical Strength ◽  
Mobile Charge ◽  
Protective Layers ◽  
Capacitance Voltage ◽  
Mis Structures

AbstractThe electrical properties of the interface between Hg1−xCdxTe (x = 0.22 and x = 0.32–0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg1−xCdxTe have been developed. The fixed charge states density, fast surface states density, and density of mobile charge are obtained from capacitance-voltage measurements. For improvement in stable and electrical strength of insulator coating for several samples over CdTe additional protective layers SiO2-Si3N4 are formed for x = 0.22 and ZnTe for x = 0.32–0.36.

Transport of sodium ions in silicon dioxide films using MOS structure

1972 ◽  
Vol 13 (1) ◽  
pp. 51-59 ◽  
Author(s):  
B. R. Singh ◽  
S. S. Rai ◽  
R. S. Srivastava
Keyword(s):  
Silicon Dioxide ◽  
Sodium Ions ◽  
Mos Structure ◽  
Silicon Dioxide Films

Aluminum Oxide/Silicon Dioxide, Double-Insulator, MOS Structure

1975 ◽  
Vol 54 (4) ◽  
pp. 687-719 ◽  
Author(s):  
J. T. Clemens ◽  
E. F. Labuda ◽  
C. N. Berglund
Keyword(s):  
Aluminum Oxide ◽  
Silicon Dioxide ◽  
Mos Structure

Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition

1966 ◽  
Vol 5 (4) ◽  
pp. 275-288 ◽  
Author(s):  
Yasuo Tarui ◽  
Yoshio Komiya ◽  
Hiroo Teshima ◽  
Kiyoko Nagai
Keyword(s):  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Surface States ◽  
Silicon Silicon ◽  
Silicon Silicon Dioxide Interface
Sign in / Sign up

Export Citation Format

Share Document