Introduction of an Al Seed Layer for Facile Adsorption of MoCl 5 during Atomic Layer Deposition of MoS 2

2020 ◽  
Vol 217 (15) ◽  
pp. 1901042
Author(s):  
Wonsik Ahn ◽  
Hyangsook Lee ◽  
Yeonchoo Cho ◽  
Kyung-Eun Byun ◽  
Hoijoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition

2014 ◽  
Vol 556 ◽  
pp. 434-439 ◽  
Author(s):  
Jae-Min Park ◽  
Kwangseon Jin ◽  
Byeol Han ◽  
Myung Jun Kim ◽  
Jongwan Jung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Nitride Film ◽  
Copper Nitride ◽  
Layer Deposition ◽  
Copper Seed Layer

Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

2013 ◽  
Vol 546 ◽  
pp. 2-8 ◽  
Author(s):  
Seungmin Yeo ◽  
Sang-Hyeok Choi ◽  
Ji-Yoon Park ◽  
Soo-Hyun Kim ◽  
Taehoon Cheon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Copper Metallization ◽  
Layer Deposition

Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-κ Al2O3 Dielectrics on Graphene

2020 ◽  
Vol 37 (7) ◽  
pp. 076801
Author(s):  
Hang Yang ◽  
Wei Chen ◽  
Ming-Yang Li ◽  
Feng Xiong ◽  
Guang Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Al Oxide

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

Direct-Write Atomic Layer Deposition of High-Quality Pt Nanostructures: Selective Growth Conditions and Seed Layer Requirements

2013 ◽  
Vol 117 (20) ◽  
pp. 10788-10798 ◽  
Author(s):  
A. J. M. Mackus ◽  
N. F. W. Thissen ◽  
J. J. L. Mulders ◽  
P. H. F. Trompenaars ◽  
M. A. Verheijen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Selective Growth ◽  
Direct Write ◽  
High Quality ◽  
Layer Deposition

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

2013 ◽  
Vol 2 (4) ◽  
pp. Q25-Q28 ◽  
Author(s):  
C.-W. Cao ◽  
W.-N. Bao ◽  
X. Lin ◽  
X.-Y. Liu ◽  
Y. Geng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Layer Deposition
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