Direct-Write Atomic Layer Deposition of High-Quality Pt Nanostructures: Selective Growth Conditions and Seed Layer Requirements

2013 ◽  
Vol 117 (20) ◽  
pp. 10788-10798 ◽  
Author(s):  
A. J. M. Mackus ◽  
N. F. W. Thissen ◽  
J. J. L. Mulders ◽  
P. H. F. Trompenaars ◽  
M. A. Verheijen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Selective Growth ◽  
Direct Write ◽  
High Quality ◽  
Layer Deposition

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

High-quality slot waveguide ring resonator based on atomic layer deposition

2015 ◽  
Author(s):  
A. Autere ◽  
L. Karvonen ◽  
A. Säynätjoki ◽  
M. Roussey ◽  
E. Färm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ring Resonator ◽  
Atomic Layer ◽  
Slot Waveguide ◽  
High Quality ◽  
Layer Deposition ◽  
Waveguide Ring

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

scholarly journals Area‐Selective Growth of HfS 2 Thin Films via Atomic Layer Deposition at Low Temperature

2020 ◽  
Vol 7 (23) ◽  
pp. 2001493
Author(s):  
Yuanyuan Cao ◽  
Tobias Wähler ◽  
Hyoungwon Park ◽  
Johannes Will ◽  
Annemarie Prihoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Selective Growth ◽  
Layer Deposition

Introduction of an Al Seed Layer for Facile Adsorption of MoCl 5 during Atomic Layer Deposition of MoS 2

2020 ◽  
Vol 217 (15) ◽  
pp. 1901042
Author(s):  
Wonsik Ahn ◽  
Hyangsook Lee ◽  
Yeonchoo Cho ◽  
Kyung-Eun Byun ◽  
Hoijoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Layer Deposition

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Phase Selectivity

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

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