N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

2013 ◽  
Vol 2 (4) ◽  
pp. Q25-Q28 ◽  
Author(s):  
C.-W. Cao ◽  
W.-N. Bao ◽  
X. Lin ◽  
X.-Y. Liu ◽  
Y. Geng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Layer Deposition

Introduction of an Al Seed Layer for Facile Adsorption of MoCl 5 during Atomic Layer Deposition of MoS 2

2020 ◽  
Vol 217 (15) ◽  
pp. 1901042
Author(s):  
Wonsik Ahn ◽  
Hyangsook Lee ◽  
Yeonchoo Cho ◽  
Kyung-Eun Byun ◽  
Hoijoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing

2016 ◽  
Vol 18 (24) ◽  
pp. 16377-16385 ◽  
Author(s):  
Yuan Zhang ◽  
Hong-Liang Lu ◽  
Tao Wang ◽  
Qing-Hua Ren ◽  
Hong-Yan Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Ultraviolet Emission ◽  
Zno Nanowire Arrays ◽  
Layer Deposition ◽  
Photoluminescence Enhancement

The ultraviolet emission of ZnO nanowires was enhanced significantly after coating with thin ZrO2 layers and thermal annealing.

Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition

2014 ◽  
Vol 556 ◽  
pp. 434-439 ◽  
Author(s):  
Jae-Min Park ◽  
Kwangseon Jin ◽  
Byeol Han ◽  
Myung Jun Kim ◽  
Jongwan Jung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Nitride Film ◽  
Copper Nitride ◽  
Layer Deposition ◽  
Copper Seed Layer

scholarly journals Enhanced UV photosensing properties of ZnO nanowires prepared by electrodeposition and atomic layer deposition

2017 ◽  
Vol 21 (10) ◽  
pp. 2877-2886 ◽  
Author(s):  
Rodolphe Alchaar ◽  
Houssin Makhlouf ◽  
Nadine Abboud ◽  
Sophie Tingry ◽  
Radhouane Chtourou ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Layer Deposition

Enhancing the Photon-Sensing Properties of ZnO Nanowires by Atomic Layer Deposition of Platinum

2010 ◽  
Vol 13 (12) ◽  
pp. K93 ◽  
Author(s):  
Yu-Hung Lin ◽  
Yang-Chih Hsueh ◽  
Chih-Chieh Wang ◽  
Jyh-Ming Wu ◽  
Tsong-Pyng Perng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Sensing Properties ◽  
Layer Deposition

Fill factor controlled nanoimprinted ZnO nanowires based on atomic layer deposition

2018 ◽  
Vol 18 (6) ◽  
pp. 767-773 ◽  
Author(s):  
Srivathsava Surabhi ◽  
Chi Hieu Luong ◽  
Min Yi Kim ◽  
Phuoc Cao Van ◽  
Viet Dong Quoc ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Fill Factor ◽  
Atomic Layer ◽  
Zno Nanowires ◽  
Layer Deposition
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