Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

2019 ◽  
Vol 216 (22) ◽  
pp. 1900591 ◽  
Author(s):  
Tajinder Kaur ◽  
Mayank Kumar Rai ◽  
Rajesh Khanna
Keyword(s):  
Graphene Nanoribbon ◽  
Multilayer Graphene ◽  
Crosstalk Noise ◽  
Temperature Dependent

scholarly journals The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 849 ◽  
Author(s):  
Peng Xu ◽  
Zhongliang Pan ◽  
Zhenhua Tang
Keyword(s):  
Delay Time ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Dielectric Medium ◽  
Graphene Nanoribbon ◽  
Noise Voltage ◽  
Multilayer Graphene ◽  
Crosstalk Noise ◽  
Characteristic Analysis ◽  
Low K

The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

Analysis of Simultaneous Switching Noise and IR-Drop in Side-Contact Multilayer Graphene Nanoribbon Power Distribution Network

2017 ◽  
Vol 27 (01) ◽  
pp. 1850001 ◽  
Author(s):  
Sandip Bhattacharya ◽  
Debaprasad Das ◽  
Hafizur Rahaman
Keyword(s):  
Integrated Circuit ◽  
Power Distribution ◽  
Graphene Nanoribbon ◽  
Multilayer Graphene ◽  
Switching Noise ◽  
Temperature Dependent ◽  
Average Percentage ◽  
Ir Drop ◽  
Simultaneous Switching Noise ◽  
Simultaneous Switching

The work in this paper presents the analyses of temperature-dependent simultaneous switching noise (SSN) and IR-Drop in multilayer graphene nanoribbon (MLGNR) power interconnects for 16[Formula: see text]nm ITRS technology node. A [Formula: see text] standard cell-based integrated circuit is designed to analyze the SSN and IR-Drop using the proposed temperature-dependent model of MLGNR and Cu interconnect for 10[Formula: see text][Formula: see text]m interconnect length at temperatures (233[Formula: see text]K, 300[Formula: see text]K and 378[Formula: see text]K). Our analysis shows that MLGNR exhibits ([Formula: see text]–[Formula: see text]) less SSN and ([Formula: see text]–[Formula: see text]) less IR-Drop as compared with traditional Cu-based power interconnects. Our analysis also shows that the average percentage of reduction in peak SSN is 52–32% (at 233[Formula: see text]K), 53–32% (at 300[Formula: see text]K) and 52–30% (at 378[Formula: see text]K) less in MLGNR compared with traditional Cu-based power interconnect and the average percentage of reduction in peak IR-Drop in MLGNR is 54–31% (at 233[Formula: see text]K), 57–29% (at 300[Formula: see text]K) and 57–26% (at 378[Formula: see text]K) less than that of Cu-based power interconnects.

Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects

2017 ◽  
Vol 26 (06) ◽  
pp. 1750102 ◽  
Author(s):  
Manodipan Sahoo ◽  
Hafizur Rahaman
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Future Generation ◽  
Graphene Nanoribbon ◽  
Copper Interconnects ◽  
Multilayer Graphene ◽  
Crosstalk Noise ◽  
Worst Case ◽  
Suitable Alternative ◽  
The Future

Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1[Formula: see text]mm long intermediate interconnects and less than 7% of that of copper interconnects for 5[Formula: see text]mm long global interconnects at 8[Formula: see text]nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.

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