Temperature dependent IR-drop and delay analysis in side-contact multilayer graphene nanoribbon based power interconnects

Author(s):  
Sandip Bhattacharya ◽  
Debaprasad Das ◽  
Hafizur Rahaman
2017 ◽  
Vol 27 (01) ◽  
pp. 1850001 ◽  
Author(s):  
Sandip Bhattacharya ◽  
Debaprasad Das ◽  
Hafizur Rahaman

The work in this paper presents the analyses of temperature-dependent simultaneous switching noise (SSN) and IR-Drop in multilayer graphene nanoribbon (MLGNR) power interconnects for 16[Formula: see text]nm ITRS technology node. A [Formula: see text] standard cell-based integrated circuit is designed to analyze the SSN and IR-Drop using the proposed temperature-dependent model of MLGNR and Cu interconnect for 10[Formula: see text][Formula: see text]m interconnect length at temperatures (233[Formula: see text]K, 300[Formula: see text]K and 378[Formula: see text]K). Our analysis shows that MLGNR exhibits ([Formula: see text]–[Formula: see text]) less SSN and ([Formula: see text]–[Formula: see text]) less IR-Drop as compared with traditional Cu-based power interconnects. Our analysis also shows that the average percentage of reduction in peak SSN is 52–32% (at 233[Formula: see text]K), 53–32% (at 300[Formula: see text]K) and 52–30% (at 378[Formula: see text]K) less in MLGNR compared with traditional Cu-based power interconnect and the average percentage of reduction in peak IR-Drop in MLGNR is 54–31% (at 233[Formula: see text]K), 57–29% (at 300[Formula: see text]K) and 57–26% (at 378[Formula: see text]K) less than that of Cu-based power interconnects.


2016 ◽  
Vol 8 (1) ◽  
pp. 01001-1-01001-4 ◽  
Author(s):  
S. Bhattacharya ◽  
◽  
D. Das ◽  
H. Rahaman ◽  
◽  
...  

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